TY - JOUR
T1 - Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide
AU - Husein, Sebastian
AU - Stuckelberger, Michael
AU - West, Bradley
AU - Ding, Laura
AU - Dauzou, Fabien
AU - Morales-Masis, Monica
AU - Duchamp, Martial
AU - Holman, Zachary
AU - Bertoni, Mariana
N1 - Funding Information:
This material is based upon the work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC1041895. S. Husein would like to thank A. Ravi and M. A. El Qader for technical assistance with the temperature-dependent Hall measurements, S. Anwar for the use of electrical equipment, and E. Soignard and the Goldwater Material Science Facility for the use of their facilities.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/6/28
Y1 - 2018/6/28
N2 - Hydrogen-doped indium oxide (IO:H) has recently garnered attention as a high-performance transparent conducting oxide (TCO) and has been incorporated into a wide array of photovoltaic devices due to its high electron mobility (>100 cm2/V s) and transparency (>90% in the visible range). Here, we demonstrate IO:H thin-films deposited by sputtering with mobilities in the wide range of 10-100 cm2/V s and carrier densities of 4 × 1018 cm-3-4.5 × 1020 cm-3 with a large range of hydrogen incorporation. We use the temperature-dependent Hall mobility from 5 to 300 K to determine the limiting electron scattering mechanisms for each film and identify the temperature ranges over which these remain significant. We find that at high hydrogen concentrations, the grain size is reduced, causing the onset of grain boundary scattering. At lower hydrogen concentrations, a combination of ionized impurity and polar optical phonon scattering limits mobility. We find that the influence of ionized impurity scattering is reduced with the increasing hydrogen content, allowing a maximization of mobility >100 cm2/V s at moderate hydrogen incorporation amounts prior to the onset of grain boundary scattering. By investigating the parameter space of the hydrogen content, temperature, and grain size, we define the three distinct regions in which the grain boundary, ionized impurity, and polar optical phonon scattering operate in this high mobility TCO.
AB - Hydrogen-doped indium oxide (IO:H) has recently garnered attention as a high-performance transparent conducting oxide (TCO) and has been incorporated into a wide array of photovoltaic devices due to its high electron mobility (>100 cm2/V s) and transparency (>90% in the visible range). Here, we demonstrate IO:H thin-films deposited by sputtering with mobilities in the wide range of 10-100 cm2/V s and carrier densities of 4 × 1018 cm-3-4.5 × 1020 cm-3 with a large range of hydrogen incorporation. We use the temperature-dependent Hall mobility from 5 to 300 K to determine the limiting electron scattering mechanisms for each film and identify the temperature ranges over which these remain significant. We find that at high hydrogen concentrations, the grain size is reduced, causing the onset of grain boundary scattering. At lower hydrogen concentrations, a combination of ionized impurity and polar optical phonon scattering limits mobility. We find that the influence of ionized impurity scattering is reduced with the increasing hydrogen content, allowing a maximization of mobility >100 cm2/V s at moderate hydrogen incorporation amounts prior to the onset of grain boundary scattering. By investigating the parameter space of the hydrogen content, temperature, and grain size, we define the three distinct regions in which the grain boundary, ionized impurity, and polar optical phonon scattering operate in this high mobility TCO.
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U2 - 10.1063/1.5033561
DO - 10.1063/1.5033561
M3 - Article
AN - SCOPUS:85049122789
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 24
M1 - 245102
ER -