TY - JOUR
T1 - Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions
AU - Shakfa, Mohammad Khaled
AU - Chernikov, Alexey
AU - Kalincev, Dimitri
AU - Chatterjee, Sangam
AU - Lu, Xianfeng
AU - Johnson, Shane
AU - Beaton, Dan A.
AU - Tiedje, Thomas
AU - Koch, Martin
PY - 2013/9
Y1 - 2013/9
N2 - The carrier dynamics of a Ga(AsBi)/GaAs single quantum well (SQW) with a Bi content of 5.5% are studied by means of time-resolved photoluminescence (PL). Random fluctuation of the alloy compositions and the presence of Bi clusters in the QW material, lead to localized states and have a significant influence on the mechanism of the PL emission. Under low excitation conditions, the PL emission is dominated by the recombination of localized electron-hole pairs. The PL spectra exhibit a considerable blue-shift with increased excitation intensity due to the filling of localized states. At high excitation intensities, additional PL signatures at the high energy side of the main emission peak evolve, corresponding to higher confined states of the quantum well. Also, the role of the carrier hopping between localized states becomes smaller. In addition, a shortening of the PL decay time is observed at increased lattice temperatures due to the delocalization of carriers, leading to faster non-radiative recombination. The latter is accompanied by the quenching of the PL intensity.
AB - The carrier dynamics of a Ga(AsBi)/GaAs single quantum well (SQW) with a Bi content of 5.5% are studied by means of time-resolved photoluminescence (PL). Random fluctuation of the alloy compositions and the presence of Bi clusters in the QW material, lead to localized states and have a significant influence on the mechanism of the PL emission. Under low excitation conditions, the PL emission is dominated by the recombination of localized electron-hole pairs. The PL spectra exhibit a considerable blue-shift with increased excitation intensity due to the filling of localized states. At high excitation intensities, additional PL signatures at the high energy side of the main emission peak evolve, corresponding to higher confined states of the quantum well. Also, the role of the carrier hopping between localized states becomes smaller. In addition, a shortening of the PL decay time is observed at increased lattice temperatures due to the delocalization of carriers, leading to faster non-radiative recombination. The latter is accompanied by the quenching of the PL intensity.
KW - Carrier dynamics
KW - Dilute bismide semiconductors
KW - Quantum wells
KW - Time-resolved photoluminescence
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U2 - 10.1002/pssc.201200738
DO - 10.1002/pssc.201200738
M3 - Article
AN - SCOPUS:84884135525
SN - 1862-6351
VL - 10
SP - 1234
EP - 1237
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 9
ER -