Abstract

Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In0.53Ga0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire and the energy relaxation times are analyzed for different cladding and core thicknesses. The percentage of carriers undergoing an impact ionization event is also presented.

Original languageEnglish (US)
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages832-835
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - Nov 21 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: Aug 22 2016Aug 25 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period8/22/168/25/16

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Keywords

  • Cladded nanowire
  • Energy relaxation
  • Full band Monte Carlo

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Hathwar, R., Saraniti, M., & Goodnick, S. (2016). Carrier relaxation and impact ionization in core-shell III-V nanowires. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 832-835). [7751540] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751540