Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence

S. Marcinkevičius, K. Gelžinyte, Yuji Zhao, S. Nakamura, S. P. Denbaars, J. S. Speck

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

Original languageEnglish (US)
Article number111108
JournalApplied Physics Letters
Volume105
Issue number11
DOIs
StatePublished - Sep 15 2014
Externally publishedYes

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near fields
quantum wells
photoluminescence
shift
excitation
photonics
scanning
energy
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence. / Marcinkevičius, S.; Gelžinyte, K.; Zhao, Yuji; Nakamura, S.; Denbaars, S. P.; Speck, J. S.

In: Applied Physics Letters, Vol. 105, No. 11, 111108, 15.09.2014.

Research output: Contribution to journalArticle

Marcinkevičius, S. ; Gelžinyte, K. ; Zhao, Yuji ; Nakamura, S. ; Denbaars, S. P. ; Speck, J. S. / Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence. In: Applied Physics Letters. 2014 ; Vol. 105, No. 11.
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