Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. Chaparro, Shane Johnson, Y. Sadofyev, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control "non-aligned" In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages1213-1216
Number of pages4
Edition4
DOIs
StatePublished - 2003
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: Sep 30 2002Oct 3 2002

Other

Other2nd International Conference on Semiconductor Quantum Dots, QD 2002
CountryJapan
CityTokyo
Period9/30/0210/3/02

Fingerprint

Semiconductor quantum dots
quantum dots
Photoluminescence
photoluminescence
Carrier lifetime
carrier lifetime
Dislocations (crystals)
excitation
time dependence
alignment
traps
Annealing
annealing
gallium arsenide
indium arsenide
decay
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Siegert, J., Marcinkevicius, S., Gaarder, A., Leon, R., Chaparro, S., Johnson, S., ... Zhang, Y-H. (2003). Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. In Physica Status Solidi C: Conferences (4 ed., pp. 1213-1216) https://doi.org/10.1002/pssc.200303046

Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. / Siegert, J.; Marcinkevicius, S.; Gaarder, A.; Leon, R.; Chaparro, S.; Johnson, Shane; Sadofyev, Y.; Zhang, Yong-Hang.

Physica Status Solidi C: Conferences. 4. ed. 2003. p. 1213-1216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Siegert, J, Marcinkevicius, S, Gaarder, A, Leon, R, Chaparro, S, Johnson, S, Sadofyev, Y & Zhang, Y-H 2003, Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. in Physica Status Solidi C: Conferences. 4 edn, pp. 1213-1216, 2nd International Conference on Semiconductor Quantum Dots, QD 2002, Tokyo, Japan, 9/30/02. https://doi.org/10.1002/pssc.200303046
Siegert J, Marcinkevicius S, Gaarder A, Leon R, Chaparro S, Johnson S et al. Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. In Physica Status Solidi C: Conferences. 4 ed. 2003. p. 1213-1216 https://doi.org/10.1002/pssc.200303046
Siegert, J. ; Marcinkevicius, S. ; Gaarder, A. ; Leon, R. ; Chaparro, S. ; Johnson, Shane ; Sadofyev, Y. ; Zhang, Yong-Hang. / Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. Physica Status Solidi C: Conferences. 4. ed. 2003. pp. 1213-1216
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