Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. Chaparro, Shane Johnson, Y. Sadofyev, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control "non-aligned" In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages1213-1216
Number of pages4
Edition4
DOIs
StatePublished - 2003
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: Sep 30 2002Oct 3 2002

Other

Other2nd International Conference on Semiconductor Quantum Dots, QD 2002
CountryJapan
CityTokyo
Period9/30/0210/3/02

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Siegert, J., Marcinkevicius, S., Gaarder, A., Leon, R., Chaparro, S., Johnson, S., Sadofyev, Y., & Zhang, Y-H. (2003). Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. In Physica Status Solidi C: Conferences (4 ed., pp. 1213-1216) https://doi.org/10.1002/pssc.200303046