Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert; S. Marcinkevicius; A. Gaarder; R. Leon; S. Chaparro; Shane Johnson; Y. Sadofyev; Yong-Hang Zhang

doi:10.1002/pssc.200303046

Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert, S. Marcinkevicius, A. Gaarder, R. Leon, S. Chaparro, Shane Johnson, Y. Sadofyev, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control "non-aligned" In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	1213-1216
Number of pages	4
Edition	4
DOIs	https://doi.org/10.1002/pssc.200303046
State	Published - 2003
Event	2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: Sep 30 2002 → Oct 3 2002

Other

Other	2nd International Conference on Semiconductor Quantum Dots, QD 2002
Country/Territory	Japan
City	Tokyo
Period	9/30/02 → 10/3/02

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1002/pssc.200303046

Cite this

Siegert, J, Marcinkevicius, S, Gaarder, A, Leon, R, Chaparro, S, Johnson, S, Sadofyev, Y & Zhang, Y-H 2003, Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers. in Physica Status Solidi C: Conferences. 4 edn, pp. 1213-1216, 2nd International Conference on Semiconductor Quantum Dots, QD 2002, Tokyo, Japan, 9/30/02. https://doi.org/10.1002/pssc.200303046

@inproceedings{4b862dc140fc4f5fad2da6ea3e40db84,

title = "Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers",

abstract = "Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control {"}non-aligned{"} In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.",

author = "J. Siegert and S. Marcinkevicius and A. Gaarder and R. Leon and S. Chaparro and Shane Johnson and Y. Sadofyev and Yong-Hang Zhang",

year = "2003",

doi = "10.1002/pssc.200303046",

language = "English (US)",

pages = "1213--1216",

booktitle = "Physica Status Solidi C: Conferences",

edition = "4",

note = "2nd International Conference on Semiconductor Quantum Dots, QD 2002 ; Conference date: 30-09-2002 Through 03-10-2002",

}

TY - GEN

T1 - Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

AU - Siegert, J.

AU - Marcinkevicius, S.

AU - Gaarder, A.

AU - Leon, R.

AU - Chaparro, S.

AU - Johnson, Shane

AU - Sadofyev, Y.

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control "non-aligned" In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.

AB - Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control "non-aligned" In As quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.

UR - http://www.scopus.com/inward/record.url?scp=77952376680&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952376680&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303046

DO - 10.1002/pssc.200303046

M3 - Conference contribution

AN - SCOPUS:77952376680

SP - 1213

EP - 1216

BT - Physica Status Solidi C: Conferences

T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002

Y2 - 30 September 2002 through 3 October 2002

ER -

Carrier recombination in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this