Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, Shane Johnson, S. A. Chaparro, S. Q. Yu, Yong-Hang Zhang

Research output: Contribution to journalArticle

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Abstract

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

Original languageEnglish (US)
Article number173509
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
StatePublished - 2006

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quantum well lasers
threshold currents
barrier layers
hydrostatic pressure
pressure dependence
quantum wells
current density
temperature dependence
room temperature
lasers
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hild, K., Sweeney, S. J., Wright, S., Lock, D. A., Jin, S. R., Marko, I. P., ... Zhang, Y-H. (2006). Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 89(17), [173509]. https://doi.org/10.1063/1.2369649

Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. / Hild, K.; Sweeney, S. J.; Wright, S.; Lock, D. A.; Jin, S. R.; Marko, I. P.; Johnson, Shane; Chaparro, S. A.; Yu, S. Q.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 89, No. 17, 173509, 2006.

Research output: Contribution to journalArticle

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, S, Chaparro, SA, Yu, SQ & Zhang, Y-H 2006, 'Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers', Applied Physics Letters, vol. 89, no. 17, 173509. https://doi.org/10.1063/1.2369649
Hild K, Sweeney SJ, Wright S, Lock DA, Jin SR, Marko IP et al. Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters. 2006;89(17). 173509. https://doi.org/10.1063/1.2369649
Hild, K. ; Sweeney, S. J. ; Wright, S. ; Lock, D. A. ; Jin, S. R. ; Marko, I. P. ; Johnson, Shane ; Chaparro, S. A. ; Yu, S. Q. ; Zhang, Yong-Hang. / Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. In: Applied Physics Letters. 2006 ; Vol. 89, No. 17.
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