Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, Shane Johnson, S. A. Chaparro, S. Q. Yu, Yong-Hang Zhang

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19 Scopus citations


In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

Original languageEnglish (US)
Article number173509
JournalApplied Physics Letters
Issue number17
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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