Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, Shane Johnson, S. A. Chaparro, S. Q. Yu, Yong-Hang Zhang

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Abstract

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

Original languageEnglish (US)
Article number173509
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
StatePublished - Nov 6 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hild, K., Sweeney, S. J., Wright, S., Lock, D. A., Jin, S. R., Marko, I. P., Johnson, S., Chaparro, S. A., Yu, S. Q., & Zhang, Y-H. (2006). Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 89(17), [173509]. https://doi.org/10.1063/1.2369649