Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

K. Hild; S. J. Sweeney; S. Wright; D. A. Lock; S. R. Jin; I. P. Marko; Shane Johnson; S. A. Chaparro; S. Q. Yu; Yong-Hang Zhang

doi:10.1063/1.2369649

Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, Shane Johnson, S. A. Chaparro, S. Q. Yu, Yong-Hang Zhang

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20 Scopus citations

Abstract

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

Original language	English (US)
Article number	173509
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2369649
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2369649

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@article{f304fb6b0f7247cfa5d34e7d89e08e73,

title = "Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers",

abstract = "In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.",

author = "K. Hild and Sweeney, {S. J.} and S. Wright and Lock, {D. A.} and Jin, {S. R.} and Marko, {I. P.} and Shane Johnson and Chaparro, {S. A.} and Yu, {S. Q.} and Yong-Hang Zhang",

note = "Funding Information: The authors thank E. P. O{\textquoteright}Reilly and S. B. Healy (Tyndall Institute, Ireland) for useful discussions. They also gratefully acknowledge EPSRC (UK) for supporting this project under Grant No. GR/T21516/01.",

year = "2006",

doi = "10.1063/1.2369649",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

AU - Hild, K.

AU - Sweeney, S. J.

AU - Wright, S.

AU - Lock, D. A.

AU - Jin, S. R.

AU - Marko, I. P.

AU - Johnson, Shane

AU - Chaparro, S. A.

AU - Yu, S. Q.

AU - Zhang, Yong-Hang

N1 - Funding Information: The authors thank E. P. O’Reilly and S. B. Healy (Tyndall Institute, Ireland) for useful discussions. They also gratefully acknowledge EPSRC (UK) for supporting this project under Grant No. GR/T21516/01.

PY - 2006

Y1 - 2006

N2 - In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

AB - In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 μm. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAsGaAsP barrier layers and, to a lesser extent, to Auger recombination.

UR - http://www.scopus.com/inward/record.url?scp=33750434472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750434472&partnerID=8YFLogxK

U2 - 10.1063/1.2369649

DO - 10.1063/1.2369649

M3 - Article

AN - SCOPUS:33750434472

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173509

ER -

Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

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