2 Scopus citations

Abstract

The phonon-assisted emission of GaAs 1 xBi x quantum wells with Bi concentrations up to x=0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier-phonon coupling is observed manifesting itself in a Huang-Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier-phonon scattering.

Original languageEnglish (US)
Article number085012
JournalSemiconductor Science and Technology
Volume27
Issue number8
DOIs
StatePublished - Aug 1 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Chernikov, A., Bornwasser, V., Koch, M., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., & Chatterjee, S. (2012). Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells. Semiconductor Science and Technology, 27(8), [085012]. https://doi.org/10.1088/0268-1242/27/8/085012