Abstract

We investigated the structural and optical properties of GaAs1−xSbx/GaAs heterostructures grown by molecular beam epitaxy on GaAs (001) substrates for Sb concentration up to 12% by means of high-resolution X-ray diffraction and photoluminescence. The correlation between our structural and optical analysis revealed that compositional fluctuations induced localized states which trap carriers at low temperature. Under low excitation power, the photoluminescence (PL) spectra are composed of two competing peaks in the temperature range of 30-80 K. The lower energy peak is associated with transitions from localized states in the band-tail of the density of states while the higher energy peak corresponds to transitions from free carriers. A model based on a redistribution process of localized excitons was used to reproduce the S-shape behavior of the temperature dependent PL. Reducing the growth temperature from 500 °C to 420 °C suppressed the S-shape behavior of the PL indicating a reduction in compositional variation.

Original languageEnglish (US)
Article number183104
JournalJournal of Applied Physics
Volume120
Issue number18
DOIs
StatePublished - Nov 14 2016

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photoluminescence
structural analysis
temperature
molecular beam epitaxy
excitons
traps
optical properties
energy
high resolution
diffraction
excitation
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures. / Maros, Aymeric; Faleev, Nikolai N.; Bertoni, Mariana; Honsberg, Christiana; King, Richard.

In: Journal of Applied Physics, Vol. 120, No. 18, 183104, 14.11.2016.

Research output: Contribution to journalArticle

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AU - King, Richard

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