Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells

Stuart Bowden, U. K. Das, S. S. Hegedus, R. W. Birkmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Minority carrier lifetime measurements were used to optimize processes for amorphous/crystalline silicon heterojunction solar cells. A blue filter highlights surface lifetime and is used to determine the interaction between the front and rear depositions. On n-type substrates, depositing the front p-type layer first led to contamination of the rear surface such that a subsequent n-type deposition on the rear intended as a back surface field had no passivating quality and giving cells with low opencircuit voltages only 580 mV. Switching the order of deposition and depositing the rear n-layer first, improved the quality of the rear passivation and subsequently increased open circuit voltages to over 620 mV; without intrinsic buffer layers. Depositions of intrinsic material resulted in lifetimes of 2.4 ms, and wafer cleaning was found to have a significant impact on measured lifetime. Finally, immersion in hydrofluoric acid was found to be the easiest way to measure substrate lifetime above 1 ms.

Original languageEnglish (US)
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages1295-1298
Number of pages4
Volume2
DOIs
StatePublished - 2007
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

Fingerprint

Carrier lifetime
Silicon
Heterojunctions
Solar cells
Hydrofluoric Acid
Hydrofluoric acid
Open circuit voltage
Substrates
Buffer layers
Passivation
Cleaning
Contamination
Crystalline materials
Electric potential

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Bowden, S., Das, U. K., Hegedus, S. S., & Birkmire, R. W. (2007). Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (Vol. 2, pp. 1295-1298). [4059881] https://doi.org/10.1109/WCPEC.2006.279651

Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells. / Bowden, Stuart; Das, U. K.; Hegedus, S. S.; Birkmire, R. W.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 2 2007. p. 1295-1298 4059881.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bowden, S, Das, UK, Hegedus, SS & Birkmire, RW 2007, Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. vol. 2, 4059881, pp. 1295-1298, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 5/7/06. https://doi.org/10.1109/WCPEC.2006.279651
Bowden S, Das UK, Hegedus SS, Birkmire RW. Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 2. 2007. p. 1295-1298. 4059881 https://doi.org/10.1109/WCPEC.2006.279651
Bowden, Stuart ; Das, U. K. ; Hegedus, S. S. ; Birkmire, R. W. / Carrier lifetime as a developmental and diagnostic tool in silicon heterojunction solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. Vol. 2 2007. pp. 1295-1298
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