Carrier dynamics in spatially ordered InAs quantum dots

Jörg Siegert, Saulius Marcinkevičius, Andreas Gaarder, Rosa Leon, Sergio Chaparro, Shane Johnson, Carlos Navarro, Xu Jin, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by time-resolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum clots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS Ashok, J Chevallier, N.M. Johnson, B.L. Sopori, H Okushi
Pages223-228
Number of pages6
Volume719
StatePublished - 2002
EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Other

OtherDefect and Impunity Engineered Semiconductors and Devices III
CountryUnited States
CitySan Francisco, CA
Period4/1/024/5/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Siegert, J., Marcinkevičius, S., Gaarder, A., Leon, R., Chaparro, S., Johnson, S., Navarro, C., Jin, X., & Zhang, Y-H. (2002). Carrier dynamics in spatially ordered InAs quantum dots. In S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, & H. Okushi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 719, pp. 223-228)