Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

J. H. Ryou; J. Kim; S. Choi; H. J. Kim; Z. Lochner; M. H. Ji; Md M. Satter; T. Detchprohm; P. D. Yoder; R. D. Dupuis; M. Asadirad; J. P. Liu; J. S. Kim; A. M. Fischere; R. Juday; Fernando Ponce; M. K. Kwon; D. Yuan; R. Guo; S. Das

doi:10.1149/06104.0109ecst

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

J. H. Ryou, J. Kim, S. Choi, H. J. Kim, Z. Lochner, M. H. Ji, Md M. Satter, T. Detchprohm, P. D. Yoder, R. D. Dupuis, M. Asadirad, J. P. Liu, J. S. Kim, A. M. Fischere, R. Juday, Fernando Ponce, M. K. Kwon, D. Yuan, R. Guo, S. Das

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

Original language	English (US)
Title of host publication	ECS Transactions
Publisher	Electrochemical Society Inc.
Pages	109-116
Number of pages	8
Volume	61
Edition	4
DOIs	https://doi.org/10.1149/06104.0109ecst
State	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014

Other

Other	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
Country/Territory	United States
City	Orlando
Period	5/11/14 → 5/15/14

ASJC Scopus subject areas

Engineering(all)

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10.1149/06104.0109ecst

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Ryou, J. H., Kim, J., Choi, S., Kim, H. J., Lochner, Z., Ji, M. H., Satter, M. M., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Asadirad, M., Liu, J. P., Kim, J. S., Fischere, A. M., Juday, R., Ponce, F., Kwon, M. K., Yuan, D., Guo, R., & Das, S. (2014). Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. In ECS Transactions (4 ed., Vol. 61, pp. 109-116). Electrochemical Society Inc.. https://doi.org/10.1149/06104.0109ecst

Ryou, JH, Kim, J, Choi, S, Kim, HJ, Lochner, Z, Ji, MH, Satter, MM, Detchprohm, T, Yoder, PD, Dupuis, RD, Asadirad, M, Liu, JP, Kim, JS, Fischere, AM, Juday, R, Ponce, F, Kwon, MK, Yuan, D, Guo, R & Das, S 2014, Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. in ECS Transactions. 4 edn, vol. 61, Electrochemical Society Inc., pp. 109-116, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting, Orlando, United States, 5/11/14. https://doi.org/10.1149/06104.0109ecst

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title = "Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes",

abstract = "Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.",

author = "Ryou, {J. H.} and J. Kim and S. Choi and Kim, {H. J.} and Z. Lochner and Ji, {M. H.} and Satter, {Md M.} and T. Detchprohm and Yoder, {P. D.} and Dupuis, {R. D.} and M. Asadirad and Liu, {J. P.} and Kim, {J. S.} and Fischere, {A. M.} and R. Juday and Fernando Ponce and Kwon, {M. K.} and D. Yuan and R. Guo and S. Das",

year = "2014",

doi = "10.1149/06104.0109ecst",

language = "English (US)",

volume = "61",

pages = "109--116",

booktitle = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

edition = "4",

note = "Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

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TY - GEN

T1 - Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

AU - Ryou, J. H.

AU - Kim, J.

AU - Choi, S.

AU - Kim, H. J.

AU - Lochner, Z.

AU - Ji, M. H.

AU - Satter, Md M.

AU - Detchprohm, T.

AU - Yoder, P. D.

AU - Dupuis, R. D.

AU - Asadirad, M.

AU - Liu, J. P.

AU - Kim, J. S.

AU - Fischere, A. M.

AU - Juday, R.

AU - Ponce, Fernando

AU - Kwon, M. K.

AU - Yuan, D.

AU - Guo, R.

AU - Das, S.

PY - 2014

Y1 - 2014

N2 - Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

AB - Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

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DO - 10.1149/06104.0109ecst

M3 - Conference contribution

AN - SCOPUS:84925041948

VL - 61

SP - 109

EP - 116

BT - ECS Transactions

PB - Electrochemical Society Inc.

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

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