Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

J. H. Ryou, J. Kim, S. Choi, H. J. Kim, Z. Lochner, M. H. Ji, Md M. Satter, T. Detchprohm, P. D. Yoder, R. D. Dupuis, M. Asadirad, J. P. Liu, J. S. Kim, A. M. Fischere, R. Juday, Fernando Ponce, M. K. Kwon, D. Yuan, R. Guo, S. Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages109-116
Number of pages8
Volume61
Edition4
DOIs
StatePublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
CountryUnited States
CityOrlando
Period5/11/145/15/14

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Quantum efficiency
Light emitting diodes
Photons
Electrons
Laser ablation
Semiconductor quantum wells

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ryou, J. H., Kim, J., Choi, S., Kim, H. J., Lochner, Z., Ji, M. H., ... Das, S. (2014). Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. In ECS Transactions (4 ed., Vol. 61, pp. 109-116). Electrochemical Society Inc.. https://doi.org/10.1149/06104.0109ecst

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. / Ryou, J. H.; Kim, J.; Choi, S.; Kim, H. J.; Lochner, Z.; Ji, M. H.; Satter, Md M.; Detchprohm, T.; Yoder, P. D.; Dupuis, R. D.; Asadirad, M.; Liu, J. P.; Kim, J. S.; Fischere, A. M.; Juday, R.; Ponce, Fernando; Kwon, M. K.; Yuan, D.; Guo, R.; Das, S.

ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. p. 109-116.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ryou, JH, Kim, J, Choi, S, Kim, HJ, Lochner, Z, Ji, MH, Satter, MM, Detchprohm, T, Yoder, PD, Dupuis, RD, Asadirad, M, Liu, JP, Kim, JS, Fischere, AM, Juday, R, Ponce, F, Kwon, MK, Yuan, D, Guo, R & Das, S 2014, Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. in ECS Transactions. 4 edn, vol. 61, Electrochemical Society Inc., pp. 109-116, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting, Orlando, United States, 5/11/14. https://doi.org/10.1149/06104.0109ecst
Ryou JH, Kim J, Choi S, Kim HJ, Lochner Z, Ji MH et al. Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. In ECS Transactions. 4 ed. Vol. 61. Electrochemical Society Inc. 2014. p. 109-116 https://doi.org/10.1149/06104.0109ecst
Ryou, J. H. ; Kim, J. ; Choi, S. ; Kim, H. J. ; Lochner, Z. ; Ji, M. H. ; Satter, Md M. ; Detchprohm, T. ; Yoder, P. D. ; Dupuis, R. D. ; Asadirad, M. ; Liu, J. P. ; Kim, J. S. ; Fischere, A. M. ; Juday, R. ; Ponce, Fernando ; Kwon, M. K. ; Yuan, D. ; Guo, R. ; Das, S. / Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. pp. 109-116
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AU - Lochner, Z.

AU - Ji, M. H.

AU - Satter, Md M.

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AU - Das, S.

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