Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

S. Srinivasan, M. Stevens, Fernando Ponce, H. Omiya, T. Mukai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

InGaN quantum wells grown in the conventional [0001] direction are known to exhibit long carrier lifetimes that are attributed to strong internal electric fields due to spontaneous and piezoelectric polarization. These fields are expected to be considerably reduced in other crystal geometries. In this work, the authors have investigated the carrier dynamics of InGaN single quantum wells grown parallel to {11 2- 2} planes. The carrier lifetimes, measured by time-resolved cathodoluminescence, are considerably smaller than for quantum wells grown in the conventional c -plane geometry. In addition, the lifetime does not change significantly with varying indium composition or increasing well width. Electron holography measurements of the electrostatic potential across these quantum wells confirm that the internal fields in this geometry are negligible. These results are of interest for the development of higher-efficiency light-emitting diodes using alternative substrate orientations.

Original languageEnglish (US)
Article number231908
JournalApplied Physics Letters
Volume89
Issue number23
DOIs
StatePublished - 2006

Fingerprint

quantum wells
electrostatics
carrier lifetime
geometry
cathodoluminescence
holography
indium
light emitting diodes
life (durability)
electric fields
polarization
crystals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes. / Srinivasan, S.; Stevens, M.; Ponce, Fernando; Omiya, H.; Mukai, T.

In: Applied Physics Letters, Vol. 89, No. 23, 231908, 2006.

Research output: Contribution to journalArticle

@article{bd5fb1ae438c43548fcc0073924e1b73,
title = "Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes",
abstract = "InGaN quantum wells grown in the conventional [0001] direction are known to exhibit long carrier lifetimes that are attributed to strong internal electric fields due to spontaneous and piezoelectric polarization. These fields are expected to be considerably reduced in other crystal geometries. In this work, the authors have investigated the carrier dynamics of InGaN single quantum wells grown parallel to {11 2- 2} planes. The carrier lifetimes, measured by time-resolved cathodoluminescence, are considerably smaller than for quantum wells grown in the conventional c -plane geometry. In addition, the lifetime does not change significantly with varying indium composition or increasing well width. Electron holography measurements of the electrostatic potential across these quantum wells confirm that the internal fields in this geometry are negligible. These results are of interest for the development of higher-efficiency light-emitting diodes using alternative substrate orientations.",
author = "S. Srinivasan and M. Stevens and Fernando Ponce and H. Omiya and T. Mukai",
year = "2006",
doi = "10.1063/1.2397566",
language = "English (US)",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

AU - Srinivasan, S.

AU - Stevens, M.

AU - Ponce, Fernando

AU - Omiya, H.

AU - Mukai, T.

PY - 2006

Y1 - 2006

N2 - InGaN quantum wells grown in the conventional [0001] direction are known to exhibit long carrier lifetimes that are attributed to strong internal electric fields due to spontaneous and piezoelectric polarization. These fields are expected to be considerably reduced in other crystal geometries. In this work, the authors have investigated the carrier dynamics of InGaN single quantum wells grown parallel to {11 2- 2} planes. The carrier lifetimes, measured by time-resolved cathodoluminescence, are considerably smaller than for quantum wells grown in the conventional c -plane geometry. In addition, the lifetime does not change significantly with varying indium composition or increasing well width. Electron holography measurements of the electrostatic potential across these quantum wells confirm that the internal fields in this geometry are negligible. These results are of interest for the development of higher-efficiency light-emitting diodes using alternative substrate orientations.

AB - InGaN quantum wells grown in the conventional [0001] direction are known to exhibit long carrier lifetimes that are attributed to strong internal electric fields due to spontaneous and piezoelectric polarization. These fields are expected to be considerably reduced in other crystal geometries. In this work, the authors have investigated the carrier dynamics of InGaN single quantum wells grown parallel to {11 2- 2} planes. The carrier lifetimes, measured by time-resolved cathodoluminescence, are considerably smaller than for quantum wells grown in the conventional c -plane geometry. In addition, the lifetime does not change significantly with varying indium composition or increasing well width. Electron holography measurements of the electrostatic potential across these quantum wells confirm that the internal fields in this geometry are negligible. These results are of interest for the development of higher-efficiency light-emitting diodes using alternative substrate orientations.

UR - http://www.scopus.com/inward/record.url?scp=33845450336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845450336&partnerID=8YFLogxK

U2 - 10.1063/1.2397566

DO - 10.1063/1.2397566

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231908

ER -