Abstract
The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C 3H 8) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | J.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones |
Pages | 115-122 |
Number of pages | 8 |
Volume | 618 |
State | Published - 2000 |
Externally published | Yes |
Event | Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000 |
Other
Other | Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 4/24/00 → 4/27/00 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials