Carbon-induced Ge islands on Si(001) grown by LPCVD

Michael Goryll, L. Vescan, H. Lüth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C 3H 8) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages115-122
Number of pages8
Volume618
StatePublished - 2000
Externally publishedYes
EventMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Goryll, M., Vescan, L., & Lüth, H. (2000). Carbon-induced Ge islands on Si(001) grown by LPCVD. In J. M. Millunchick, A. L. Barabasi, N. A. Modine, & E. D. Jones (Eds.), Materials Research Society Symposium - Proceedings (Vol. 618, pp. 115-122)