Carbon Enhanced Vapor Etching For Pattern Development In Integrated Circuits

Integrated circuit fabrication is continually requiring increasingly smaller dimensions in order to provide more processing or memory capability in smaller spaces. Unfortunately, the image resolution technology a major the limiting factor in the capabilities of the devices being manufactured. Researchers at Arizona State University have developed a high resolution, high sensitivity resist system for pattern definition, involving a layer of silicon dioxide coated with a carbon-containing compound, etched after exposure to UV light in HF vapor. This system, due to the nature of the process involved and the molecular size dimensions of the photosensitive coating shows great promise in enhancing the fabrication capabilities of integrated circuits and the capabilities of the devices produced.