Carbon Enhanced Vapor Etching

Michael Kozicki (Inventor)

Research output: Patent

Abstract

Pattern definition in integrated circuits, the combination of photolithography and etching, has evolved greatly over the past 25 years. The levels of integration we are currently witnessing would be impossible without advanced pattern definition schemes. There have been considerable advances in lithographical exposure methods and in the chemistry of resist materials and etchants, but the development of photoresist remains a wet step even in dry etching processes. Wet developing is undesirable in advanced intergated circuit fabrication as the organic resist material tends to swell when bathed in the developer. This effect leads to a loss in resolution, a problem which must be avoided for small geometry pattern definition. A further problem with wet developing is the formation of developer residue ("scum"), which will act as a block to subsequent etching.Researcher at Arizona State University have developed a dry development technique that overcomes many of the problems alluded to above.For more information on this technique, please refer to US patent No. 4,904,338
Original languageEnglish (US)
StatePublished - Jan 1 1900

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