Abstract

The calculated electron Hall Mobility and Hall scattering factor in n -type 6H-SiC based on numerical solutions to the Boltzmann transport equation are presented. These results were obtained by solving the Boltzmann equation exactly for the electron Hall mobility using the contraction mapping principle and the electron drift mobility with Rode's iterative method. The relative importance of the various scattering mechanisms for these calculations is discussed, and a new set of values for the acoustic deformation potential, intervalley deformation potential, and intervalley phonon energy is found, which simultaneously fit experimental Hall mobility and Hall scattering factor data. The calculated Hall mobility and Hall scattering factor are in good agreement with experimental results. In addition, predicted values of the Hall scattering factor for various temperatures and doping concentrations are given.

Original languageEnglish (US)
Article number053719
JournalJournal of Applied Physics
Volume106
Issue number5
DOIs
StatePublished - Sep 28 2009

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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