Calculation of the Auger line at the Si/SiO2 interface

T. Kunjunny, D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Auger line shape has been calculated for the surface of (100) silicon, using a semiempirical tight-binding slab model. Chemisorbed oxygen was considered by having the oxygen atom (or molecule) satisfy the double dangling bond of the surface atoms. The presence of the chemisorbed oxygen caused a shift of the outer-layer local density of states in such a manner to create additional structure in the N(E) distribution for the Auger transition. This structure correlates well with such structure reported recently by several experimental groups.

Original languageEnglish (US)
Pages (from-to)1031-1032
Number of pages2
JournalApplied Physics Letters
Volume37
Issue number11
DOIs
StatePublished - 1980
Externally publishedYes

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oxygen
line shape
oxygen atoms
slabs
shift
silicon
atoms
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Calculation of the Auger line at the Si/SiO2 interface. / Kunjunny, T.; Ferry, D. K.

In: Applied Physics Letters, Vol. 37, No. 11, 1980, p. 1031-1032.

Research output: Contribution to journalArticle

Kunjunny, T. ; Ferry, D. K. / Calculation of the Auger line at the Si/SiO2 interface. In: Applied Physics Letters. 1980 ; Vol. 37, No. 11. pp. 1031-1032.
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