The Auger line shape has been calculated for the surface of (100) silicon, using a semiempirical tight-binding slab model. Chemisorbed oxygen was considered by having the oxygen atom (or molecule) satisfy the double dangling bond of the surface atoms. The presence of the chemisorbed oxygen caused a shift of the outer-layer local density of states in such a manner to create additional structure in the N(E) distribution for the Auger transition. This structure correlates well with such structure reported recently by several experimental groups.
|Original language||English (US)|
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 1980|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)