Calculation of Fin width for bulk inversion in Si FinFET by applying supersymmetry

Razib Shishir, David Ferry

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The transition from surface inversion to bulk inversion in a Si FinFET is investigated in this paper using supersymmetric quantum mechanics. A double quantum well potential, which is the supersymmetric partner of a harmonic oscillator potential, was chosen. The fraction of charge residing inside the bulk was calculated as a function of fin width and electron density. For any electron density, more charge resides in the bulk as the fin width decreases. On the other hand, for a fixed fin width, charges move to the surface as the electron density increases. It was found that in Si FinFET for the electron density of 3 × 1012 cm-2 bulk inversion occurs when the fin width is about 8 nm.

Original languageEnglish (US)
Pages (from-to)305-308
Number of pages4
JournalJournal of Computational Electronics
Volume7
Issue number3
DOIs
StatePublished - Feb 15 2008

Keywords

  • Bulk inversion
  • FinFET
  • Supersymmetric quantum mechanics
  • Surface inversion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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