Abstract
The transition from surface inversion to bulk inversion in a Si FinFET is investigated in this paper using supersymmetric quantum mechanics. A double quantum well potential, which is the supersymmetric partner of a harmonic oscillator potential, was chosen. The fraction of charge residing inside the bulk was calculated as a function of fin width and electron density. For any electron density, more charge resides in the bulk as the fin width decreases. On the other hand, for a fixed fin width, charges move to the surface as the electron density increases. It was found that in Si FinFET for the electron density of 3 × 1012 cm-2 bulk inversion occurs when the fin width is about 8 nm.
Original language | English (US) |
---|---|
Pages (from-to) | 305-308 |
Number of pages | 4 |
Journal | Journal of Computational Electronics |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - 2008 |
Keywords
- Bulk inversion
- FinFET
- Supersymmetric quantum mechanics
- Surface inversion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering