TY - GEN
T1 - Cadmium Telluride Cells on Silicon as Precursors for Two-Junction Tandem Cells
AU - Pandey, Ramesh
AU - Drayton, Jennifer
AU - Gregory, Christopher
AU - Kumar, Niranjana Mohan
AU - Tyler, Kevin
AU - King, Richard
AU - Sites, James
N1 - Funding Information:
ACKNOWLEDGMENT This work was funded by U.S. National Science Foundation (NSF), Division of Electrical, Communications and Cyber Systems (ECCS), EAGER awards #1665508 and #1665299. The authors would like to thank Prof. Walajabad Sampath and Dr. Tushar Shimpi for their valuable inputs and comments.
Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Cadmium telluride and silicon are among the widely used absorber materials in photovoltaic industry. A tandem solar cell of these two can absorb significant portion of solar spectrum to yield high efficiency due to the added voltage of the two solar cells. On basis of low-cost production, a CdTe/Si cell has the potential to produce low-cost and high efficiency tandem PV. The CdTe top cell in a substrate configuration is essential to achieve a tandem between CdTe and Si. A functional CdS/CdTe solar cell in the substrate configuration was fabricated on a Si wafer. Current-Voltage measurements show a diode-like curve with lower J-V parameters compared to standard CdS/CdTe cells. SCAPS simulations were performed to identify possible reasons for poor performance and help improve the device performance.
AB - Cadmium telluride and silicon are among the widely used absorber materials in photovoltaic industry. A tandem solar cell of these two can absorb significant portion of solar spectrum to yield high efficiency due to the added voltage of the two solar cells. On basis of low-cost production, a CdTe/Si cell has the potential to produce low-cost and high efficiency tandem PV. The CdTe top cell in a substrate configuration is essential to achieve a tandem between CdTe and Si. A functional CdS/CdTe solar cell in the substrate configuration was fabricated on a Si wafer. Current-Voltage measurements show a diode-like curve with lower J-V parameters compared to standard CdS/CdTe cells. SCAPS simulations were performed to identify possible reasons for poor performance and help improve the device performance.
KW - CdTe
KW - Silicon
KW - Two-Junction
KW - substrate
KW - tandem
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U2 - 10.1109/PVSC45281.2020.9300571
DO - 10.1109/PVSC45281.2020.9300571
M3 - Conference contribution
AN - SCOPUS:85099546367
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1326
EP - 1329
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -