Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.
- Device modeling
- Electron transport
- SOI MOSFETs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering