Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Jinman Yang; Trevor Thornton; Stephen Goodnick; Michael Kozicki; Joseph Lyding

doi:10.1016/S0921-4526(01)01404-1

Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Jinman Yang, Trevor Thornton, Stephen Goodnick, Michael Kozicki, Joseph Lyding

Research output: Contribution to journal › Article › peer-review

Abstract

Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

Original language	English (US)
Pages (from-to)	354-357
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01404-1
State	Published - Mar 2002

Keywords

Device modeling
Electron transport
SOI MOSFETs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)01404-1

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title = "Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy",

abstract = "Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.",

keywords = "Device modeling, Electron transport, SOI MOSFETs",

author = "Jinman Yang and Trevor Thornton and Stephen Goodnick and Michael Kozicki and Joseph Lyding",

note = "Funding Information: This work is supported by the Office of Naval Research.",

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doi = "10.1016/S0921-4526(01)01404-1",

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T1 - Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

AU - Yang, Jinman

AU - Thornton, Trevor

AU - Goodnick, Stephen

AU - Kozicki, Michael

AU - Lyding, Joseph

N1 - Funding Information: This work is supported by the Office of Naval Research.

PY - 2002/3

Y1 - 2002/3

N2 - Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

AB - Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage, reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope.

KW - Device modeling

KW - Electron transport

KW - SOI MOSFETs

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DO - 10.1016/S0921-4526(01)01404-1

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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