Bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs

V. Subramanian, J. Kedzierski, N. Lindert, H. Tam, Y. Su, J. McHale, Yu Cao, T. J. King, J. Bokor, C. Hu

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Scopus citations

Abstract

A method of forming ultrathin-body silicon on insulator technology MOSFETs is presented. Lateral solid-phase epitaxy of a deposited amorphous film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with in-chip bulk devices.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages28-29
Number of pages2
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: Jun 28 1999Jun 30 1999

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period6/28/996/30/99

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Subramanian, V., Kedzierski, J., Lindert, N., Tam, H., Su, Y., McHale, J., Cao, Y., King, T. J., Bokor, J., & Hu, C. (1999). Bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs. In Annual Device Research Conference Digest (pp. 28-29). IEEE.