Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers

H. Q. Le; G. W. Turner; J. R. Ochoa; M. J. Manfra; C. C. Cook; Y. H. Zhang

doi:10.1063/1.116849

Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers

H. Q. Le, G. W. Turner, J. R. Ochoa, M. J. Manfra, C. C. Cook, Y. H. Zhang

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1-2 nm linewidth.

Original language	English (US)
Pages (from-to)	2804-2806
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	19
DOIs	https://doi.org/10.1063/1.116849
State	Published - Nov 4 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.116849

Cite this

@article{372745b8f6b64d8992e4694389bc3756,

title = "Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers",

abstract = "Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1-2 nm linewidth.",

author = "Le, {H. Q.} and Turner, {G. W.} and Ochoa, {J. R.} and Manfra, {M. J.} and Cook, {C. C.} and Zhang, {Y. H.}",

year = "1996",

month = nov,

day = "4",

doi = "10.1063/1.116849",

language = "English (US)",

volume = "69",

pages = "2804--2806",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers

AU - Le, H. Q.

AU - Turner, G. W.

AU - Ochoa, J. R.

AU - Manfra, M. J.

AU - Cook, C. C.

AU - Zhang, Y. H.

PY - 1996/11/4

Y1 - 1996/11/4

N2 - Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1-2 nm linewidth.

AB - Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1-2 nm linewidth.

UR - http://www.scopus.com/inward/record.url?scp=0030569107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030569107&partnerID=8YFLogxK

U2 - 10.1063/1.116849

DO - 10.1063/1.116849

M3 - Article

AN - SCOPUS:0030569107

SN - 0003-6951

VL - 69

SP - 2804

EP - 2806

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this