Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers

H. Q. Le, G. W. Turner, J. R. Ochoa, M. J. Manfra, C. C. Cook, Y. H. Zhang

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1-2 nm linewidth.

Original languageEnglish (US)
Pages (from-to)2804-2806
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number19
DOIs
StatePublished - Nov 4 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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