Bright, crack-free InGaN/GaN light emitters on Si(111)

A. Dadgar; M. Poschenrieder; O. Contreras; J. Christen; K. Fehse; J. Bläsing; A. Diez; F. Schulze; T. Riemann; Fernando Ponce; A. Krost

doi:10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M

Bright, crack-free InGaN/GaN light emitters on Si(111)

A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, Fernando Ponce, A. Krost

Physics

Research output: Contribution to journal › Conference article › peer-review

51 Scopus citations

Abstract

Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a Si_xN_y mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼10⁹ cm^-2 by the low-temperature AlN and Si_xN_y interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

Original language	English (US)
Pages (from-to)	308-313
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	192
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M
State	Published - Aug 2002
Event	4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain Duration: Mar 11 2002 → Mar 15 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M

Cite this

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title = "Bright, crack-free InGaN/GaN light emitters on Si(111)",

abstract = "Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.",

author = "A. Dadgar and M. Poschenrieder and O. Contreras and J. Christen and K. Fehse and J. Bl{\"a}sing and A. Diez and F. Schulze and T. Riemann and Fernando Ponce and A. Krost",

year = "2002",

month = aug,

doi = "10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M",

language = "English (US)",

volume = "192",

pages = "308--313",

journal = "Physica Status Solidi (A) Applied Research",

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number = "2",

note = "4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) ; Conference date: 11-03-2002 Through 15-03-2002",

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TY - JOUR

T1 - Bright, crack-free InGaN/GaN light emitters on Si(111)

AU - Dadgar, A.

AU - Poschenrieder, M.

AU - Contreras, O.

AU - Christen, J.

AU - Fehse, K.

AU - Bläsing, J.

AU - Diez, A.

AU - Schulze, F.

AU - Riemann, T.

AU - Ponce, Fernando

AU - Krost, A.

PY - 2002/8

Y1 - 2002/8

N2 - Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

AB - Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

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DO - 10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M

M3 - Conference article

AN - SCOPUS:0036672390

SN - 0031-8965

VL - 192

SP - 308

EP - 313

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

T2 - 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002)

Y2 - 11 March 2002 through 15 March 2002

ER -

Bright, crack-free InGaN/GaN light emitters on Si(111)

Abstract

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