Bright, crack-free InGaN/GaN light emitters on Si(111)

A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, Fernando Ponce, A. Krost

Research output: Contribution to journalConference articlepeer-review

49 Scopus citations

Abstract

Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

Original languageEnglish (US)
Pages (from-to)308-313
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number2
DOIs
StatePublished - Aug 1 2002
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: Mar 11 2002Mar 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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