Bright, crack-free InGaN/GaN light emitters on Si(111)

A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, Fernando Ponce, A. Krost

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

Original languageEnglish (US)
Pages (from-to)308-313
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number2
DOIs
StatePublished - Aug 2002

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interlayers
emitters
cracks
Cracks
output
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Light emitting diodes
Luminescence
Masks
insertion
elimination
Diodes
light emitting diodes
masks
diodes
luminescence
Transmission electron microscopy
Wavelength
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bläsing, J., ... Krost, A. (2002). Bright, crack-free InGaN/GaN light emitters on Si(111). Physica Status Solidi (A) Applied Research, 192(2), 308-313. https://doi.org/10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M

Bright, crack-free InGaN/GaN light emitters on Si(111). / Dadgar, A.; Poschenrieder, M.; Contreras, O.; Christen, J.; Fehse, K.; Bläsing, J.; Diez, A.; Schulze, F.; Riemann, T.; Ponce, Fernando; Krost, A.

In: Physica Status Solidi (A) Applied Research, Vol. 192, No. 2, 08.2002, p. 308-313.

Research output: Contribution to journalArticle

Dadgar, A, Poschenrieder, M, Contreras, O, Christen, J, Fehse, K, Bläsing, J, Diez, A, Schulze, F, Riemann, T, Ponce, F & Krost, A 2002, 'Bright, crack-free InGaN/GaN light emitters on Si(111)', Physica Status Solidi (A) Applied Research, vol. 192, no. 2, pp. 308-313. https://doi.org/10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M
Dadgar, A. ; Poschenrieder, M. ; Contreras, O. ; Christen, J. ; Fehse, K. ; Bläsing, J. ; Diez, A. ; Schulze, F. ; Riemann, T. ; Ponce, Fernando ; Krost, A. / Bright, crack-free InGaN/GaN light emitters on Si(111). In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 192, No. 2. pp. 308-313.
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AU - Dadgar, A.

AU - Poschenrieder, M.

AU - Contreras, O.

AU - Christen, J.

AU - Fehse, K.

AU - Bläsing, J.

AU - Diez, A.

AU - Schulze, F.

AU - Riemann, T.

AU - Ponce, Fernando

AU - Krost, A.

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AB - Crack-free, up to 2.8 μm thick GaN-based light emitting diodes were grown by metalorganic chemical vapor deposition on 2-inch Si(111) substrates. Elimination of cracks was achieved by using two ∼12 nm thick low-temperature AlN:Si interlayers for stress reduction. A significant enhancement in optical output power was obtained by an in situ insertion of a SixNy mask. Transmission electron microscopy measurements showed a tenfold reduction in dislocation density to ∼109 cm-2 by the low-temperature AlN and SixNy interlayers, resulting in a significant increase in luminescence intensity. Vertically contacted diodes showed a light output power of 152 μW at a current of 20 mA and a wavelength of 455 nm. Turn-on voltages around 2.8 V and series resistances of 55 Ω were obtained.

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