Boundary scattering in wet-etched InAs/GaSb heterostructure wires: With and without magnetic field

F. Rahman, Trevor Thornton, B. L. Gallagher, R. A. Stradling

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the observation of boundary scattering in damage-free wires made from InAs/GaSb quantum wells. Fabrication of very long wires has enabled us to observe boundary scattering contribution to the resistivity of these wires both with and without a magnetic field. A very well-defined region of suppression of both field-induced and zero-field boundary scattering was observed. These effects were seen to become more pronounced as the width of the wires was reduced. Differences from boundary scattering in GaAs/AlGaAs heterostructure wires are pointed out. Results of a study of the dependence of boundary scattering on temperature are also described.

Original languageEnglish (US)
Pages (from-to)478-483
Number of pages6
JournalSemiconductor Science and Technology
Volume14
Issue number5
DOIs
StatePublished - May 1999

Fingerprint

Heterojunctions
wire
Wire
Scattering
Magnetic fields
scattering
magnetic fields
Semiconductor quantum wells
aluminum gallium arsenides
indium arsenide
retarding
quantum wells
damage
Fabrication
fabrication
electrical resistivity
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Boundary scattering in wet-etched InAs/GaSb heterostructure wires : With and without magnetic field. / Rahman, F.; Thornton, Trevor; Gallagher, B. L.; Stradling, R. A.

In: Semiconductor Science and Technology, Vol. 14, No. 5, 05.1999, p. 478-483.

Research output: Contribution to journalArticle

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