Boundary scattering in wet-etched InAs/GaSb heterostructure wires: With and without magnetic field

F. Rahman, Trevor Thornton, B. L. Gallagher, R. A. Stradling

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report the observation of boundary scattering in damage-free wires made from InAs/GaSb quantum wells. Fabrication of very long wires has enabled us to observe boundary scattering contribution to the resistivity of these wires both with and without a magnetic field. A very well-defined region of suppression of both field-induced and zero-field boundary scattering was observed. These effects were seen to become more pronounced as the width of the wires was reduced. Differences from boundary scattering in GaAs/AlGaAs heterostructure wires are pointed out. Results of a study of the dependence of boundary scattering on temperature are also described.

Original languageEnglish (US)
Pages (from-to)478-483
Number of pages6
JournalSemiconductor Science and Technology
Volume14
Issue number5
DOIs
StatePublished - May 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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