Boundary scattering in quantum wires fabricated using ion implanted gates

R. J. Blaikie, K. Nakazato, T. J. Thornton, J. R.A. Cleaver, H. Ahmed

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have fabricated multi-probe wires in GaAs/AlGaAs heterostructure material using implanted p-type regions to provide the lateral confinement. We observe two peaks in the weak field longitudinal magnetoresistance, together with a `last plateau' in the Hall resistance and a negative zero-field bend resistance. Device simulations using diffuse boundary scattering in a semi-classical model agree with our experiments.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Institute of Physics Publishing Ltd
Pages163-166
Number of pages4
ISBN (Print)0750302259
StatePublished - Dec 1 1992
Externally publishedYes
EventProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications - Luxor, Egypt
Duration: Jan 6 1992Jan 10 1992

Publication series

NameInstitute of Physics Conference Series
Volume127
ISSN (Print)0951-3248

Other

OtherProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications
CityLuxor, Egypt
Period1/6/921/10/92

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Blaikie, R. J., Nakazato, K., Thornton, T. J., Cleaver, J. R. A., & Ahmed, H. (1992). Boundary scattering in quantum wires fabricated using ion implanted gates. In Institute of Physics Conference Series (pp. 163-166). (Institute of Physics Conference Series; Vol. 127). Publ by Institute of Physics Publishing Ltd.