Boron contamination and precipitation during the growth of InP

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams, R. L. Henry, E. M. Swiggard

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Abstract

We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B2O3) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B2O3 or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B2O3 and pBN. A diffusion coefficient of D(750°C) < × 10-14 cm2 s-1 for boron in InP has been determined in this work.

Original languageEnglish (US)
Pages (from-to)443-448
Number of pages6
JournalJournal of Crystal Growth
Volume54
Issue number3
DOIs
StatePublished - Sep 1981
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Oberstar, J. D., Streetman, B. G., Baker, J. E., Williams, P., Henry, R. L., & Swiggard, E. M. (1981). Boron contamination and precipitation during the growth of InP. Journal of Crystal Growth, 54(3), 443-448. https://doi.org/10.1016/0022-0248(81)90497-8