Bond-length relaxation in Si1-xGex alloys

D. B. Aldrich, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

We have measured and quantified the effect of alloy composition on the atomic bonding in relaxed molecular-beam-epitaxy-deposited crystalline Si1-xGex alloys. X-ray-absorption fine structure (XAFS) and x-ray diffraction were used to examine how the atomic bonding in Si1-xGex is affected by changes in alloy composition. In this study, the Ge-Ge and Ge-Si bond lengths were measured using XAFS and compared with the conflicting results of existing analytical models and previous XAFS studies. The measured Ge-Ge and Ge-Si bond lengths were found to be in good agreement with the analytical models, which predict that the Ge-Ge, Ge-Si, and Si-Si bonds maintain distinctly different lengths which change linearly with alloy composition. The topological rigidity parameter a** was used to quantify the linear dependence of the bond lengths on alloy composition and a value of a**=0.63 was calculated from the measured bond lengths. An extensive XAFS error analysis was performed and the error in the topological rigidity parameter a**=0.63-0.13+0.08 was determined. This value of a**, which is notably different from 0 or 1, indicates that both the bond lengths and bond angles are distorted by changes in composition.

Original languageEnglish (US)
Pages (from-to)15026-15033
Number of pages8
JournalPhysical Review B
Volume50
Issue number20
DOIs
StatePublished - Jan 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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