Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering

Tao Xu, Alexey Yu Nikiforov, Ryan France, Christos Thomidis, Adrian Williams, Theodore D. Moustakas, Lin Zhou, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm-2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages56-60
Number of pages5
Volume955
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

Fingerprint

Molecular beam epitaxy
Semiconductor quantum dots
Light emitting diodes
Plasmas
Semiconductor quantum wells
Nucleation
Stark effect
Cathodoluminescence
Electroluminescence
Laser modes
Full width at half maximum
Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Xu, T., Nikiforov, A. Y., France, R., Thomidis, C., Williams, A., Moustakas, T. D., ... Smith, D. (2006). Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. In Materials Research Society Symposium Proceedings (Vol. 955, pp. 56-60)

Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. / Xu, Tao; Nikiforov, Alexey Yu; France, Ryan; Thomidis, Christos; Williams, Adrian; Moustakas, Theodore D.; Zhou, Lin; Smith, David.

Materials Research Society Symposium Proceedings. Vol. 955 2006. p. 56-60.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xu, T, Nikiforov, AY, France, R, Thomidis, C, Williams, A, Moustakas, TD, Zhou, L & Smith, D 2006, Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. in Materials Research Society Symposium Proceedings. vol. 955, pp. 56-60, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Xu T, Nikiforov AY, France R, Thomidis C, Williams A, Moustakas TD et al. Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. In Materials Research Society Symposium Proceedings. Vol. 955. 2006. p. 56-60
Xu, Tao ; Nikiforov, Alexey Yu ; France, Ryan ; Thomidis, Christos ; Williams, Adrian ; Moustakas, Theodore D. ; Zhou, Lin ; Smith, David. / Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. Materials Research Society Symposium Proceedings. Vol. 955 2006. pp. 56-60
@inproceedings{d99a836e78d94135b46f77351c9565b0,
title = "Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering",
abstract = "In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm-2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.",
author = "Tao Xu and Nikiforov, {Alexey Yu} and Ryan France and Christos Thomidis and Adrian Williams and Moustakas, {Theodore D.} and Lin Zhou and David Smith",
year = "2006",
language = "English (US)",
isbn = "9781604234114",
volume = "955",
pages = "56--60",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering

AU - Xu, Tao

AU - Nikiforov, Alexey Yu

AU - France, Ryan

AU - Thomidis, Christos

AU - Williams, Adrian

AU - Moustakas, Theodore D.

AU - Zhou, Lin

AU - Smith, David

PY - 2006

Y1 - 2006

N2 - In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm-2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.

AB - In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm-2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.

UR - http://www.scopus.com/inward/record.url?scp=40949086506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949086506&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:40949086506

SN - 9781604234114

VL - 955

SP - 56

EP - 60

BT - Materials Research Society Symposium Proceedings

ER -