Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering

Tao Xu, Alexey Yu Nikiforov, Ryan France, Christos Thomidis, Adrian Williams, Theodore D. Moustakas, Lin Zhou, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report the development of blue-green-red LEDs by MBE based on InGaN quantum dots (QDs) and quantum wells in the active region, and GaN QDs in the nucleation layer for dislocation filtering. Self-assembled InGaN QDs and GaN QDs were grown in the Stranski-Krastanov mode. For the GaN QDs grown at 770 °C, the height distribution of the dots shows a bimodal distribution, which can be attributed to the interaction of the GaN QDs with the threading dislocations. TEM and XRD studies indicate that GaN QDs in the nucleation region help threading dislocations to deviate and annihilate. The average dot height, diameter and density of the InGaN QDs were estimated to be 3 nm, 30 nm and 7×1010 cm-2, respectively. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red shift 330 meV with respect to the emission peak of the uncapped single layer of InGaN QDs due to quantum confined Stark effect (QCSE). Blue LEDs based on InGaN/GaN multiple quantum wells (MQWs) as well as green and red LEDs based on InGaN MQDs emitting at 440 nm, 560 nm and 640 nm with FWHM of 30 nm, 87 nm and 97 nm, respectively, were grown and fabricated. The electroluminescence spectra of the green and red InGaN MQD LEDs show larger blue-shift with increasing injection current than the blue InGaN/GaN MQW LEDs.

Original languageEnglish (US)
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
PublisherMaterials Research Society
Pages56-60
Number of pages5
ISBN (Print)9781604234114
DOIs
StatePublished - Jan 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Xu, T., Nikiforov, A. Y., France, R., Thomidis, C., Williams, A., Moustakas, T. D., Zhou, L., & Smith, D. (2006). Blue-green-red LEDs based on InGaN quantum dots by plasma-assisted MBE using GaN QDs for dislocation filtering. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 56-60). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i05-05