Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Dongsheng Fan, Zhaoquan Zeng, Vitaliy G. Dorogan, Yusuke Hirono, Chen Li, Yuriy I. Mazur, Shui Qing Yu, Shane Johnson, Zhiming M. Wang, Gregory J. Salamo

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10 Scopus citations

Abstract

This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.

Original languageEnglish (US)
Pages (from-to)1635-1639
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number5
DOIs
StatePublished - Jan 1 2013

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Fan, D., Zeng, Z., Dorogan, V. G., Hirono, Y., Li, C., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M., & Salamo, G. J. (2013). Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy. Journal of Materials Science: Materials in Electronics, 24(5), 1635-1639. https://doi.org/10.1007/s10854-012-0987-z