Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Dongsheng Fan; Zhaoquan Zeng; Vitaliy G. Dorogan; Yusuke Hirono; Chen Li; Yuriy I. Mazur; Shui Qing Yu; Shane Johnson; Zhiming M. Wang; Gregory J. Salamo

doi:10.1007/s10854-012-0987-z

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Dongsheng Fan, Zhaoquan Zeng, Vitaliy G. Dorogan, Yusuke Hirono, Chen Li, Yuriy I. Mazur, Shui Qing Yu, Shane Johnson, Zhiming M. Wang, Gregory J. Salamo

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.

Original language	English (US)
Pages (from-to)	1635-1639
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	24
Issue number	5
DOIs	https://doi.org/10.1007/s10854-012-0987-z
State	Published - May 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-012-0987-z

Cite this

@article{2e539e9b79ba42198d7cde48d77326c2,

title = "Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy",

abstract = "This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.",

author = "Dongsheng Fan and Zhaoquan Zeng and Dorogan, {Vitaliy G.} and Yusuke Hirono and Chen Li and Mazur, {Yuriy I.} and Yu, {Shui Qing} and Shane Johnson and Wang, {Zhiming M.} and Salamo, {Gregory J.}",

note = "Funding Information: Acknowledgments This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute and NSFC-51272038.",

year = "2013",

month = may,

doi = "10.1007/s10854-012-0987-z",

language = "English (US)",

volume = "24",

pages = "1635--1639",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

AU - Fan, Dongsheng

AU - Zeng, Zhaoquan

AU - Dorogan, Vitaliy G.

AU - Hirono, Yusuke

AU - Li, Chen

AU - Mazur, Yuriy I.

AU - Yu, Shui Qing

AU - Johnson, Shane

AU - Wang, Zhiming M.

AU - Salamo, Gregory J.

N1 - Funding Information: Acknowledgments This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute and NSFC-51272038.

PY - 2013/5

Y1 - 2013/5

N2 - This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.

AB - This paper explores the significance of using bismuth as a surfactant during the molecular beam epitaxy growth of InAs quantum dots (QDs). The results show that Bi-mediated growth provides a practical solution towards achieving lower density QDs with high optical quality. The InAs QDs grown using Bi as a surfactant exhibit a 50 % lower QD density, narrower QD size distribution, and a doubled photoluminescence peak intensity at 16 K compared to those grown without Bi.

UR - http://www.scopus.com/inward/record.url?scp=84893649091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893649091&partnerID=8YFLogxK

U2 - 10.1007/s10854-012-0987-z

DO - 10.1007/s10854-012-0987-z

M3 - Article

AN - SCOPUS:84893649091

SN - 0957-4522

VL - 24

SP - 1635

EP - 1639

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5

ER -

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this