Original language | English (US) |
---|---|
Title of host publication | Molecular Beam Epitaxy |
Publisher | Elsevier Inc. |
Pages | 139-158 |
Number of pages | 20 |
ISBN (Print) | 9780123878397 |
DOIs | |
State | Published - 2013 |
ASJC Scopus subject areas
- Materials Science(all)
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Bismuth-containing III-V semiconductors : Epitaxial growth and physical properties. / Batool, Zahida; Chatterjee, Sangam; Chernikov, Alexej; Duzik, Adam; Fritz, Rafael; Gogineni, Chaturvedi; Hild, Konstanze; Hosea, Thomas J.C.; Imhof, Sebastian; Johnson, Shane; Jiang, Zenan; Jin, Shirong; Koch, Martin; Koch, Stephan W.; Kolata, Kolja; Lewis, Ryan B.; Lu, Xianfeng; Masnadi-Shirazi, Mostafa; Millunchick, Joanna Mirecki; Mooney, Patricia M.; Riordan, Nathaniel A.; Rubel, Oleg; Sweeney, Stephen J.; Thomas, John C.; Thränhardt, Angela; Tiedje, Thomas; Volz, Kerstin.
Molecular Beam Epitaxy. Elsevier Inc., 2013. p. 139-158.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Bismuth-containing III-V semiconductors
T2 - Epitaxial growth and physical properties
AU - Batool, Zahida
AU - Chatterjee, Sangam
AU - Chernikov, Alexej
AU - Duzik, Adam
AU - Fritz, Rafael
AU - Gogineni, Chaturvedi
AU - Hild, Konstanze
AU - Hosea, Thomas J.C.
AU - Imhof, Sebastian
AU - Johnson, Shane
AU - Jiang, Zenan
AU - Jin, Shirong
AU - Koch, Martin
AU - Koch, Stephan W.
AU - Kolata, Kolja
AU - Lewis, Ryan B.
AU - Lu, Xianfeng
AU - Masnadi-Shirazi, Mostafa
AU - Millunchick, Joanna Mirecki
AU - Mooney, Patricia M.
AU - Riordan, Nathaniel A.
AU - Rubel, Oleg
AU - Sweeney, Stephen J.
AU - Thomas, John C.
AU - Thränhardt, Angela
AU - Tiedje, Thomas
AU - Volz, Kerstin
N1 - Funding Information: We gratefully acknowledge financial support through the National Science Foundation awards DMR-0909028 and DMR-0908745, the Natural Sciences and Engineering Research Council of Canada, the Engineering and Physical Sciences Research Council (UK) grant EP/G064725/1, the Deutsche Forschungsgemeinschaft (German Research Foundation) and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors.
PY - 2013
Y1 - 2013
UR - http://www.scopus.com/inward/record.url?scp=84883949591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84883949591&partnerID=8YFLogxK
U2 - 10.1016/B978-0-12-387839-7.00007-5
DO - 10.1016/B978-0-12-387839-7.00007-5
M3 - Chapter
AN - SCOPUS:84883949591
SN - 9780123878397
SP - 139
EP - 158
BT - Molecular Beam Epitaxy
PB - Elsevier Inc.
ER -