Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Zahida Batool; Sangam Chatterjee; Alexej Chernikov; Adam Duzik; Rafael Fritz; Chaturvedi Gogineni; Konstanze Hild; Thomas J.C. Hosea; Sebastian Imhof; Shane Johnson; Zenan Jiang; Shirong Jin; Martin Koch; Stephan W. Koch; Kolja Kolata; Ryan B. Lewis; Xianfeng Lu; Mostafa Masnadi-Shirazi; Joanna Mirecki Millunchick; Patricia M. Mooney; Nathaniel A. Riordan; Oleg Rubel; Stephen J. Sweeney; John C. Thomas; Angela Thränhardt; Thomas Tiedje; Kerstin Volz

doi:10.1016/B978-0-12-387839-7.00007-5

Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Zahida Batool, Sangam Chatterjee, Alexej Chernikov, Adam Duzik, Rafael Fritz, Chaturvedi Gogineni, Konstanze Hild, Thomas J.C. Hosea, Sebastian Imhof, Shane Johnson, Zenan Jiang, Shirong Jin, Martin Koch, Stephan W. Koch, Kolja Kolata, Ryan B. Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Joanna Mirecki Millunchick, Patricia M. MooneyNathaniel A. Riordan, Oleg Rubel, Stephen J. Sweeney, John C. Thomas, Angela Thränhardt, Thomas Tiedje, Kerstin Volz

Research output: Chapter in Book/Report/Conference proceeding › Chapter

10 Scopus citations

Original language	English (US)
Title of host publication	Molecular Beam Epitaxy
Publisher	Elsevier Inc.
Pages	139-158
Number of pages	20
ISBN (Print)	9780123878397
DOIs	https://doi.org/10.1016/B978-0-12-387839-7.00007-5
State	Published - 2013

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1016/B978-0-12-387839-7.00007-5

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Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., Hild, K., Hosea, T. J. C., Imhof, S., Johnson, S., Jiang, Z., Jin, S., Koch, M., Koch, S. W., Kolata, K., Lewis, R. B., Lu, X., Masnadi-Shirazi, M., Millunchick, J. M., ... Volz, K. (2013). Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy (pp. 139-158). Elsevier Inc.. https://doi.org/10.1016/B978-0-12-387839-7.00007-5

Batool, Z, Chatterjee, S, Chernikov, A, Duzik, A, Fritz, R, Gogineni, C, Hild, K, Hosea, TJC, Imhof, S, Johnson, S, Jiang, Z, Jin, S, Koch, M, Koch, SW, Kolata, K, Lewis, RB, Lu, X, Masnadi-Shirazi, M, Millunchick, JM, Mooney, PM, Riordan, NA, Rubel, O, Sweeney, SJ, Thomas, JC, Thränhardt, A, Tiedje, T & Volz, K 2013, Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. in Molecular Beam Epitaxy. Elsevier Inc., pp. 139-158. https://doi.org/10.1016/B978-0-12-387839-7.00007-5

@inbook{859ff5c3c9b1418aa380d4d81494716b,

title = "Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties",

author = "Zahida Batool and Sangam Chatterjee and Alexej Chernikov and Adam Duzik and Rafael Fritz and Chaturvedi Gogineni and Konstanze Hild and Hosea, {Thomas J.C.} and Sebastian Imhof and Shane Johnson and Zenan Jiang and Shirong Jin and Martin Koch and Koch, {Stephan W.} and Kolja Kolata and Lewis, {Ryan B.} and Xianfeng Lu and Mostafa Masnadi-Shirazi and Millunchick, {Joanna Mirecki} and Mooney, {Patricia M.} and Riordan, {Nathaniel A.} and Oleg Rubel and Sweeney, {Stephen J.} and Thomas, {John C.} and Angela Thr{\"a}nhardt and Thomas Tiedje and Kerstin Volz",

note = "Funding Information: We gratefully acknowledge financial support through the National Science Foundation awards DMR-0909028 and DMR-0908745, the Natural Sciences and Engineering Research Council of Canada, the Engineering and Physical Sciences Research Council (UK) grant EP/G064725/1, the Deutsche Forschungsgemeinschaft (German Research Foundation) and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors.",

year = "2013",

doi = "10.1016/B978-0-12-387839-7.00007-5",

language = "English (US)",

isbn = "9780123878397",

pages = "139--158",

booktitle = "Molecular Beam Epitaxy",

publisher = "Elsevier Inc.",

}

TY - CHAP

T1 - Bismuth-containing III-V semiconductors

T2 - Epitaxial growth and physical properties

AU - Batool, Zahida

AU - Chatterjee, Sangam

AU - Chernikov, Alexej

AU - Duzik, Adam

AU - Fritz, Rafael

AU - Gogineni, Chaturvedi

AU - Hild, Konstanze

AU - Hosea, Thomas J.C.

AU - Imhof, Sebastian

AU - Johnson, Shane

AU - Jiang, Zenan

AU - Jin, Shirong

AU - Koch, Martin

AU - Koch, Stephan W.

AU - Kolata, Kolja

AU - Lewis, Ryan B.

AU - Lu, Xianfeng

AU - Masnadi-Shirazi, Mostafa

AU - Millunchick, Joanna Mirecki

AU - Mooney, Patricia M.

AU - Riordan, Nathaniel A.

AU - Rubel, Oleg

AU - Sweeney, Stephen J.

AU - Thomas, John C.

AU - Thränhardt, Angela

AU - Tiedje, Thomas

AU - Volz, Kerstin

N1 - Funding Information: We gratefully acknowledge financial support through the National Science Foundation awards DMR-0909028 and DMR-0908745, the Natural Sciences and Engineering Research Council of Canada, the Engineering and Physical Sciences Research Council (UK) grant EP/G064725/1, the Deutsche Forschungsgemeinschaft (German Research Foundation) and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors.

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84883949591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883949591&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-387839-7.00007-5

DO - 10.1016/B978-0-12-387839-7.00007-5

M3 - Chapter

AN - SCOPUS:84883949591

SN - 9780123878397

SP - 139

EP - 158

BT - Molecular Beam Epitaxy

PB - Elsevier Inc.

ER -

Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

ASJC Scopus subject areas

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