Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Zahida Batool, Sangam Chatterjee, Alexej Chernikov, Adam Duzik, Rafael Fritz, Chaturvedi Gogineni, Konstanze Hild, Thomas J.C. Hosea, Sebastian Imhof, Shane Johnson, Zenan Jiang, Shirong Jin, Martin Koch, Stephan W. Koch, Kolja Kolata, Ryan B. Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Joanna Mirecki Millunchick, Patricia M. MooneyNathaniel A. Riordan, Oleg Rubel, Stephen J. Sweeney, John C. Thomas, Angela Thränhardt, Thomas Tiedje, Kerstin Volz

Research output: Chapter in Book/Report/Conference proceeding › Chapter

6 Citations (Scopus)
Original languageEnglish (US)
Title of host publicationMolecular Beam Epitaxy
PublisherElsevier Inc.
Pages139-158
Number of pages20
ISBN (Print)9780123878397
DOIs
StatePublished - Aug 29 2013

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Semiconductor growth
Bismuth
Epitaxial growth
Physical properties
III-V semiconductors

ASJC Scopus subject areas

  • Materials Science(all)

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Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., ... Volz, K. (2013). Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy (pp. 139-158). Elsevier Inc.. https://doi.org/10.1016/B978-0-12-387839-7.00007-5

Bismuth-containing III-V semiconductors : Epitaxial growth and physical properties. / Batool, Zahida; Chatterjee, Sangam; Chernikov, Alexej; Duzik, Adam; Fritz, Rafael; Gogineni, Chaturvedi; Hild, Konstanze; Hosea, Thomas J.C.; Imhof, Sebastian; Johnson, Shane; Jiang, Zenan; Jin, Shirong; Koch, Martin; Koch, Stephan W.; Kolata, Kolja; Lewis, Ryan B.; Lu, Xianfeng; Masnadi-Shirazi, Mostafa; Millunchick, Joanna Mirecki; Mooney, Patricia M.; Riordan, Nathaniel A.; Rubel, Oleg; Sweeney, Stephen J.; Thomas, John C.; Thränhardt, Angela; Tiedje, Thomas; Volz, Kerstin.

Molecular Beam Epitaxy. Elsevier Inc., 2013. p. 139-158.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Batool, Z, Chatterjee, S, Chernikov, A, Duzik, A, Fritz, R, Gogineni, C, Hild, K, Hosea, TJC, Imhof, S, Johnson, S, Jiang, Z, Jin, S, Koch, M, Koch, SW, Kolata, K, Lewis, RB, Lu, X, Masnadi-Shirazi, M, Millunchick, JM, Mooney, PM, Riordan, NA, Rubel, O, Sweeney, SJ, Thomas, JC, Thränhardt, A, Tiedje, T & Volz, K 2013, Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. in Molecular Beam Epitaxy. Elsevier Inc., pp. 139-158. https://doi.org/10.1016/B978-0-12-387839-7.00007-5
Batool Z, Chatterjee S, Chernikov A, Duzik A, Fritz R, Gogineni C et al. Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties. In Molecular Beam Epitaxy. Elsevier Inc. 2013. p. 139-158 https://doi.org/10.1016/B978-0-12-387839-7.00007-5
Batool, Zahida ; Chatterjee, Sangam ; Chernikov, Alexej ; Duzik, Adam ; Fritz, Rafael ; Gogineni, Chaturvedi ; Hild, Konstanze ; Hosea, Thomas J.C. ; Imhof, Sebastian ; Johnson, Shane ; Jiang, Zenan ; Jin, Shirong ; Koch, Martin ; Koch, Stephan W. ; Kolata, Kolja ; Lewis, Ryan B. ; Lu, Xianfeng ; Masnadi-Shirazi, Mostafa ; Millunchick, Joanna Mirecki ; Mooney, Patricia M. ; Riordan, Nathaniel A. ; Rubel, Oleg ; Sweeney, Stephen J. ; Thomas, John C. ; Thränhardt, Angela ; Tiedje, Thomas ; Volz, Kerstin. / Bismuth-containing III-V semiconductors : Epitaxial growth and physical properties. Molecular Beam Epitaxy. Elsevier Inc., 2013. pp. 139-158
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AU - Batool, Zahida

AU - Chatterjee, Sangam

AU - Chernikov, Alexej

AU - Duzik, Adam

AU - Fritz, Rafael

AU - Gogineni, Chaturvedi

AU - Hild, Konstanze

AU - Hosea, Thomas J.C.

AU - Imhof, Sebastian

AU - Johnson, Shane

AU - Jiang, Zenan

AU - Jin, Shirong

AU - Koch, Martin

AU - Koch, Stephan W.

AU - Kolata, Kolja

AU - Lewis, Ryan B.

AU - Lu, Xianfeng

AU - Masnadi-Shirazi, Mostafa

AU - Millunchick, Joanna Mirecki

AU - Mooney, Patricia M.

AU - Riordan, Nathaniel A.

AU - Rubel, Oleg

AU - Sweeney, Stephen J.

AU - Thomas, John C.

AU - Thränhardt, Angela

AU - Tiedje, Thomas

AU - Volz, Kerstin

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BT - Molecular Beam Epitaxy

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