Bimodal distribution of Ge islands on Si(001) grown by LPCVD

Michael Goryll, Lili Vescan, Hans Lüth

Research output: Contribution to journalConference article

27 Scopus citations

Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 °C. The experiments show an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 90 nm, indicates that huts are not a stable configuration. The two different island types are found to be the reason for the bimodal nature of the size distribution. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

Original languageEnglish (US)
Pages (from-to)251-256
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume69
DOIs
StatePublished - Jan 14 2000
Externally publishedYes
EventThe European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France
Duration: Jun 1 1999Jun 4 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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