Bimodal distribution of Ge islands on Si(001) grown by LPCVD

Michael Goryll; Lili Vescan; Hans Lüth

doi:10.1016/S0921-5107(99)00288-3

Bimodal distribution of Ge islands on Si(001) grown by LPCVD

Michael Goryll, Lili Vescan, Hans Lüth

Research output: Contribution to journal › Conference article › peer-review

29 Scopus citations

Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 °C. The experiments show an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 90 nm, indicates that huts are not a stable configuration. The two different island types are found to be the reason for the bimodal nature of the size distribution. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

Original language	English (US)
Pages (from-to)	251-256
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	69
DOIs	https://doi.org/10.1016/S0921-5107(99)00288-3
State	Published - Jan 14 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: Jun 1 1999 → Jun 4 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(99)00288-3

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title = "Bimodal distribution of Ge islands on Si(001) grown by LPCVD",

abstract = "Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 °C. The experiments show an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 90 nm, indicates that huts are not a stable configuration. The two different island types are found to be the reason for the bimodal nature of the size distribution. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.",

author = "Michael Goryll and Lili Vescan and Hans L{\"u}th",

note = "Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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doi = "10.1016/S0921-5107(99)00288-3",

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T1 - Bimodal distribution of Ge islands on Si(001) grown by LPCVD

AU - Goryll, Michael

AU - Vescan, Lili

AU - Lüth, Hans

PY - 2000/1/14

Y1 - 2000/1/14

N2 - Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 °C. The experiments show an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 90 nm, indicates that huts are not a stable configuration. The two different island types are found to be the reason for the bimodal nature of the size distribution. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

AB - Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 °C. The experiments show an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 90 nm, indicates that huts are not a stable configuration. The two different island types are found to be the reason for the bimodal nature of the size distribution. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

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DO - 10.1016/S0921-5107(99)00288-3

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AN - SCOPUS:0033895067

SN - 0921-5107

VL - 69

SP - 251

EP - 256

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

Bimodal distribution of Ge islands on Si(001) grown by LPCVD

Abstract

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