Biexciton gain and the mott transition in GaAs quantum wires

Yuhei Hayamizu, Masahiro Yoshita, Yasushi Takahashi, Hidefumi Akiyama, Cun-Zheng Ning, Loren N. Pfeiffer, Ken W. West

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Abstract

Optical gain and the Mott transition in GaAs quantum wires were studied via simultaneous measurements of absorption and photoluminescence (PL). We observed well-separated PL peaks assigned to excitons (X) and biexcitons (XX) even at densities where optical gain existed. A sharp optical gain first appeared when the XX peak overtook the X peak, indicating the gain origin of biexciton-exciton population inversion. The XX peak eventually changed to a broad peak of plasma, and a broad gain due to plasma was observed as the Mott transition was completed.

Original languageEnglish (US)
Article number167403
JournalPhysical Review Letters
Volume99
Issue number16
DOIs
StatePublished - Oct 19 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hayamizu, Y., Yoshita, M., Takahashi, Y., Akiyama, H., Ning, C-Z., Pfeiffer, L. N., & West, K. W. (2007). Biexciton gain and the mott transition in GaAs quantum wires. Physical Review Letters, 99(16), [167403]. https://doi.org/10.1103/PhysRevLett.99.167403