Biassed secondary electron imaging of monatomic surface steps on vicinal Si(100) in a UHV STEM

Jeffery Drucker, Mohan Krishnamurthy, Gary Hembree

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Biassed secondary electron (b-SE) SEM images of steps on Si(100) surfaces misoriented 1° towards 〈110〉 have been obtained using a number of imaging geometries including normal incidence. The periodicity of the regularly spaced steps unambiguously identifies these as single-atom-high steps. High-efficiency secondary electron collection from the input surface of the sample makes it possible to obtain images of low contrast features on low-atomic-number samples in UHV. Simple topography is shown to be a likely mechanism for the contrast observed in the digitally acquired b-SE images. Images of step pinning at refractory particles during surface sublimation identify the up-step direction and are similar to those obtained by other surface microscopic techniques.

Original languageEnglish (US)
Pages (from-to)323-328
Number of pages6
JournalUltramicroscopy
Volume35
Issue number3-4
DOIs
StatePublished - 1991

Fingerprint

Imaging techniques
Electrons
electrons
Sublimation
Refractory materials
Topography
refractories
sublimation
periodic variations
topography
Atoms
incidence
Scanning electron microscopy
Geometry
scanning electron microscopy
geometry
atoms
Direction compound

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

Biassed secondary electron imaging of monatomic surface steps on vicinal Si(100) in a UHV STEM. / Drucker, Jeffery; Krishnamurthy, Mohan; Hembree, Gary.

In: Ultramicroscopy, Vol. 35, No. 3-4, 1991, p. 323-328.

Research output: Contribution to journalArticle

Drucker, Jeffery ; Krishnamurthy, Mohan ; Hembree, Gary. / Biassed secondary electron imaging of monatomic surface steps on vicinal Si(100) in a UHV STEM. In: Ultramicroscopy. 1991 ; Vol. 35, No. 3-4. pp. 323-328.
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