Biassed secondary electron imaging in a UHV-STEM

G. G. Hembree; Peter Crozier; Jeffery Drucker; M. Krishnamurthy; J. A. Venables; J. M. Cowley

doi:10.1016/0304-3991(89)90040-5

Biassed secondary electron imaging in a UHV-STEM

G. G. Hembree, Peter Crozier, Jeffery Drucker, M. Krishnamurthy, J. A. Venables, J. M. Cowley

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

A new dedicated ultra-high-vacuum scanning transmission electron microscope (UHV-STEM) has been developed for the NSF HREM facility at Arizona State University, in conjunction with VG Microscopes Ltd. This instrument is fitted with a specimen preparation chamber in which vacua of better than 5x10^-10 mbar can be routinely achieved; the pressure inside the column is better than 10^-10 mbar. The initial performance in various imaging modes is reported. Several techniques have been incorporated to obtain information from surfaces. Here we demonstrate the usefulness of biassed secondary electron imaging from both sides of thin transmission samples. In conjunction with conventional STEM imaging and analysis techniques, these methods can be used to correlate surface and subsurface information on samples with complex surface topography. Examples typical of catalytic and semiconductor applications are given.

Original language	English (US)
Pages (from-to)	111-115
Number of pages	5
Journal	Ultramicroscopy
Volume	31
Issue number	1
DOIs	https://doi.org/10.1016/0304-3991(89)90040-5
State	Published - Sep 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(89)90040-5

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AU - Crozier, Peter

AU - Drucker, Jeffery

AU - Krishnamurthy, M.

AU - Venables, J. A.

AU - Cowley, J. M.

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Biassed secondary electron imaging in a UHV-STEM

Abstract

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