Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs

Ashwin Ashok; Dragica Vasileska; Stephen Goodnick; Olin Hartin

doi:10.1109/IWCE.2009.5091087

Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs

Ashwin Ashok, Dragica Vasileska, Stephen Goodnick, Olin Hartin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.

Original language	English (US)
Title of host publication	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs	https://doi.org/10.1109/IWCE.2009.5091087
State	Published - 2009
Event	2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China Duration: May 27 2009 → May 29 2009

Publication series

Name	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other	2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/Territory	China
City	Beijing
Period	5/27/09 → 5/29/09

Keywords

Coulomb effects
Electromechanical coupling
GaN HEMTs
Quantum effects

ASJC Scopus subject areas

Computational Mechanics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IWCE.2009.5091087

Cite this

Ashok, A., Vasileska, D., Goodnick, S., & Hartin, O. (2009). Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 Article 5091087 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091087

Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. / Ashok, Ashwin; Vasileska, Dragica ; Goodnick, Stephen et al.
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091087 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ashok, A, Vasileska, D , Goodnick, S & Hartin, O 2009, Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. in Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009., 5091087, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009, 2009 13th International Workshop on Computational Electronics, IWCE 2009, Beijing, China, 5/27/09. https://doi.org/10.1109/IWCE.2009.5091087

Ashok A, Vasileska D , Goodnick S, Hartin O. Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091087. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). doi: 10.1109/IWCE.2009.5091087

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abstract = "In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.",

keywords = "Coulomb effects, Electromechanical coupling, GaN HEMTs, Quantum effects",

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Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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