Abstract

In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - Oct 27 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
CountryChina
CityBeijing
Period5/27/095/29/09

Keywords

  • Coulomb effects
  • Electromechanical coupling
  • GaN HEMTs
  • Quantum effects

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Ashok, A., Vasileska, D., Goodnick, S., & Hartin, O. (2009). Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 [5091087] (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091087