Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation

Yago Gonzalez Velo, Jérôme Boch, Nicolas Jean Henri Roche, Stephanie Pérez, Jean Roch Vaillé, Laurent Dusseau, Frédéric Saigné, Eric Lorfèvre, Ronald D. Schrimpf, Christian Chatry, Anna Canals

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to be investigated. In this work, this time-saving technique, the switched dose-rate technique, is applied for the first time to evaluate the behavior of dynamics parameters of a bipolar IC irradiated all pins grounded, and also to evaluate the behavior of static and dynamics parameters of bipolar ICs irradiated under several bias configurations. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.

Original languageEnglish (US)
Article number5550424
Pages (from-to)1950-1957
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 1
DOIs
StatePublished - Aug 1 2010
Externally publishedYes

Fingerprint

microelectronics
Dosimetry
Irradiation
degradation
Degradation
dosage
irradiation
configurations
evaluation
curves

Keywords

  • Accelerated test technique
  • bipolar technology
  • dose rate
  • enhanced low dose rate sensitivity (ELDRS)
  • total dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Gonzalez Velo, Y., Boch, J., Roche, N. J. H., Pérez, S., Vaillé, J. R., Dusseau, L., ... Canals, A. (2010). Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation. IEEE Transactions on Nuclear Science, 57(4 PART 1), 1950-1957. [5550424]. https://doi.org/10.1109/TNS.2010.2043370

Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation. / Gonzalez Velo, Yago; Boch, Jérôme; Roche, Nicolas Jean Henri; Pérez, Stephanie; Vaillé, Jean Roch; Dusseau, Laurent; Saigné, Frédéric; Lorfèvre, Eric; Schrimpf, Ronald D.; Chatry, Christian; Canals, Anna.

In: IEEE Transactions on Nuclear Science, Vol. 57, No. 4 PART 1, 5550424, 01.08.2010, p. 1950-1957.

Research output: Contribution to journalArticle

Gonzalez Velo, Y, Boch, J, Roche, NJH, Pérez, S, Vaillé, JR, Dusseau, L, Saigné, F, Lorfèvre, E, Schrimpf, RD, Chatry, C & Canals, A 2010, 'Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation', IEEE Transactions on Nuclear Science, vol. 57, no. 4 PART 1, 5550424, pp. 1950-1957. https://doi.org/10.1109/TNS.2010.2043370
Gonzalez Velo, Yago ; Boch, Jérôme ; Roche, Nicolas Jean Henri ; Pérez, Stephanie ; Vaillé, Jean Roch ; Dusseau, Laurent ; Saigné, Frédéric ; Lorfèvre, Eric ; Schrimpf, Ronald D. ; Chatry, Christian ; Canals, Anna. / Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57, No. 4 PART 1. pp. 1950-1957.
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