Bi-epitaxial grain boundary junctions in YBa2Cu 3O7

K. Char, M. S. Colclough, S. M. Garrison, N. Newman, G. Zaharchuk

Research output: Contribution to journalArticlepeer-review

245 Scopus citations

Abstract

We have developed a new way of making grain boundary junctions in YBa 2Cu3O7 thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45° grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 103-104 A/cm2 at 4.2 K and 102-103 A/cm2 at 77 K, while the rest of the film has a critical current density of 1-3×106 A/cm2 at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high Tc Josephson junction technology that appears readily extendable to high Tc integrated circuits.

Original languageEnglish (US)
Pages (from-to)733-735
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number6
DOIs
StatePublished - Dec 1 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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