Bi-epitaxial grain boundary junctions in YBa2Cu 3O7

K. Char, M. S. Colclough, S. M. Garrison, Nathan Newman, G. Zaharchuk

Research output: Contribution to journalArticle

243 Citations (Scopus)

Abstract

We have developed a new way of making grain boundary junctions in YBa 2Cu3O7 thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45° grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 103-104 A/cm2 at 4.2 K and 102-103 A/cm2 at 77 K, while the rest of the film has a critical current density of 1-3×106 A/cm2 at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high Tc Josephson junction technology that appears readily extendable to high Tc integrated circuits.

Original languageEnglish (US)
Pages (from-to)733-735
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number6
DOIs
StatePublished - 1991
Externally publishedYes

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grain boundaries
critical current
current density
Josephson junctions
epitaxy
integrated circuits
seeds
buffers
interference
modulation
electric potential
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Char, K., Colclough, M. S., Garrison, S. M., Newman, N., & Zaharchuk, G. (1991). Bi-epitaxial grain boundary junctions in YBa2Cu 3O7 Applied Physics Letters, 59(6), 733-735. https://doi.org/10.1063/1.105355

Bi-epitaxial grain boundary junctions in YBa2Cu 3O7 . / Char, K.; Colclough, M. S.; Garrison, S. M.; Newman, Nathan; Zaharchuk, G.

In: Applied Physics Letters, Vol. 59, No. 6, 1991, p. 733-735.

Research output: Contribution to journalArticle

Char, K, Colclough, MS, Garrison, SM, Newman, N & Zaharchuk, G 1991, 'Bi-epitaxial grain boundary junctions in YBa2Cu 3O7 ', Applied Physics Letters, vol. 59, no. 6, pp. 733-735. https://doi.org/10.1063/1.105355
Char, K. ; Colclough, M. S. ; Garrison, S. M. ; Newman, Nathan ; Zaharchuk, G. / Bi-epitaxial grain boundary junctions in YBa2Cu 3O7 In: Applied Physics Letters. 1991 ; Vol. 59, No. 6. pp. 733-735.
@article{6f3c2645d2bd47919960753245f5080b,
title = "Bi-epitaxial grain boundary junctions in YBa2Cu 3O7",
abstract = "We have developed a new way of making grain boundary junctions in YBa 2Cu3O7 thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45° grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 103-104 A/cm2 at 4.2 K and 102-103 A/cm2 at 77 K, while the rest of the film has a critical current density of 1-3×106 A/cm2 at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high Tc Josephson junction technology that appears readily extendable to high Tc integrated circuits.",
author = "K. Char and Colclough, {M. S.} and Garrison, {S. M.} and Nathan Newman and G. Zaharchuk",
year = "1991",
doi = "10.1063/1.105355",
language = "English (US)",
volume = "59",
pages = "733--735",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Bi-epitaxial grain boundary junctions in YBa2Cu 3O7

AU - Char, K.

AU - Colclough, M. S.

AU - Garrison, S. M.

AU - Newman, Nathan

AU - Zaharchuk, G.

PY - 1991

Y1 - 1991

N2 - We have developed a new way of making grain boundary junctions in YBa 2Cu3O7 thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45° grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 103-104 A/cm2 at 4.2 K and 102-103 A/cm2 at 77 K, while the rest of the film has a critical current density of 1-3×106 A/cm2 at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high Tc Josephson junction technology that appears readily extendable to high Tc integrated circuits.

AB - We have developed a new way of making grain boundary junctions in YBa 2Cu3O7 thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45° grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 103-104 A/cm2 at 4.2 K and 102-103 A/cm2 at 77 K, while the rest of the film has a critical current density of 1-3×106 A/cm2 at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high Tc Josephson junction technology that appears readily extendable to high Tc integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=21544481405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544481405&partnerID=8YFLogxK

U2 - 10.1063/1.105355

DO - 10.1063/1.105355

M3 - Article

AN - SCOPUS:21544481405

VL - 59

SP - 733

EP - 735

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -