Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters

M. J. Pennell, M. Hasan, David Allee, W. Xie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A hierarchical behavioral model of a submicron 6 bit CMOS flash analog to digital converter is presented. Circuit parameters are extracted from process dependent device data using an extension of the g m/I D methodology for use in the behavioral model. In using this approach, the model will track changes in physical device geometries without the need for re-characterization. The comparator model is validated against SPICE and system level simulation results are presented for the full converter.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Editors Anon
PublisherIEEE
Pages1636-1639
Number of pages4
Volume3
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE International Symposium on Circuits and Systems, ISCAS'97. Part 4 (of 4) - Hong Kong, Hong Kong
Duration: Jun 9 1997Jun 12 1997

Other

OtherProceedings of the 1997 IEEE International Symposium on Circuits and Systems, ISCAS'97. Part 4 (of 4)
CityHong Kong, Hong Kong
Period6/9/976/12/97

Fingerprint

SPICE
Digital to analog conversion
Geometry
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Pennell, M. J., Hasan, M., Allee, D., & Xie, W. (1997). Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters. In Anon (Ed.), Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 3, pp. 1636-1639). IEEE.

Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters. / Pennell, M. J.; Hasan, M.; Allee, David; Xie, W.

Proceedings - IEEE International Symposium on Circuits and Systems. ed. / Anon. Vol. 3 IEEE, 1997. p. 1636-1639.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pennell, MJ, Hasan, M, Allee, D & Xie, W 1997, Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters. in Anon (ed.), Proceedings - IEEE International Symposium on Circuits and Systems. vol. 3, IEEE, pp. 1636-1639, Proceedings of the 1997 IEEE International Symposium on Circuits and Systems, ISCAS'97. Part 4 (of 4), Hong Kong, Hong Kong, 6/9/97.
Pennell MJ, Hasan M, Allee D, Xie W. Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters. In Anon, editor, Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 3. IEEE. 1997. p. 1636-1639
Pennell, M. J. ; Hasan, M. ; Allee, David ; Xie, W. / Behavioral model of a 1.8 V 6b CMOS flash ADC based on device parameters. Proceedings - IEEE International Symposium on Circuits and Systems. editor / Anon. Vol. 3 IEEE, 1997. pp. 1636-1639
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