Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients

X. J. Chen, Hugh Barnaby, R. L. Pease, P. Adell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.

Original languageEnglish (US)
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages115-120
Number of pages6
DOIs
StatePublished - Sep 17 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

Keywords

  • Gated bipolar transistor
  • Hydrogen
  • Interface traps
  • Oxide charge
  • Radiation environment

ASJC Scopus subject areas

  • Engineering(all)

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