@inproceedings{9dd6ef8fe53b45db9d841a54d2605456,
title = "Behavior of radiation-induced defects in bipolar oxides during irradiation and annealing in hydrogen-rich and -depleted ambients",
abstract = "The results of this study showed that when excess hydrogen is introduced to gated bipolar devices in the radiation environment, the buildup of radiation-induced defects in device oxides and their annealing behaviors are dramatically changed due to hydrogen. The different annealing behaviors of oxide charge between hydrogen-rich and -depleted devices suggest that the defects contributing to the enhanced oxide charge may be microscopically different from the conventional trapped charge described in literature.",
keywords = "Gated bipolar transistor, Hydrogen, Interface traps, Oxide charge, Radiation environment",
author = "Chen, {X. J.} and Hugh Barnaby and Pease, {R. L.} and P. Adell",
year = "2008",
doi = "10.1109/RELPHY.2008.4558871",
language = "English (US)",
isbn = "9781424420506",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "115--120",
booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",
note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",
}