BARRIER HEIGHTS FROM OHMIC TO BANDGAP: MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE.

Stephen J. Eglash, Nathan Newman, Shihong Pan, W. E. Spicer, Douglas M. Collins, Mark P. Zurakowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages119-122
Number of pages4
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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