@article{781e114a0cdc43beb1e9daadffb63adb,
title = "Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air",
keywords = "band structure modification, gallium telluride, layered semiconductors, oxygen chemisorption",
author = "Fonseca, {Jose J.} and Sefaattin Tongay and Mehmet Topsakal and Chew, {Annabel R.} and Lin, {Alan J.} and Changhyun Ko and Luce, {Alexander V.} and Alberto Salleo and Junqiao Wu and Dubon, {Oscar D.}",
note = "Funding Information: J.J.F. acknowledges the support from the National Science Foundation Graduate Research Fellowships Program (Grant No. DGE-1106400). Experiments were supported by the Electronic Materials Program (EMAT). XPS at the Molecular Foundry and EMAT were funded by the Director, Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The authors gratefully acknowledge Dr. D. Frank Ogletree for the assistance with the XPS and O. Olukoya for initial experiments on exfoliating GaTe. Computational resources were partly provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). Part of this work was performed at the Stanford Nano Shared Facilities (SNSF).",
year = "2016",
month = aug,
doi = "10.1002/adma.201601151",
language = "English (US)",
volume = "28",
pages = "6465--6470",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "30",
}