Abstract

The structural and optical properties of pseudomorphic InAsSbBi grown on GaSb are examined using reflection high-energy electron diffraction, X-ray diffraction, Rutherford backscattering spectrometry, and spectroscopic ellipsometry. The layer studied is 210 nm thick and was grown by molecular beam epitaxy at 280 °C under a (2 × 3) surface reconstruction using near-stoichiometric fluxes. The material is homogeneous and single crystal with no observable defects or surface Bi droplets. The group-V mole fractions are determined using Rutherford backscattering measurements of the Bi mole fraction and X-ray diffraction measurements of the lattice tetragonal distortion. The bandgap energy is determined from the room temperature optical constants measured using spectroscopic ellipsometry. These and measurements from pseudomorphic InAsSb and InAsBi on GaSb are utilized to describe the bandgap energy of InAsSbBi as a function of mole fraction using a bandgap bowing model.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Letters
Volume111
Issue number8
DOIs
StatePublished - Aug 21 2017

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molecular beam epitaxy
ellipsometry
backscattering
diffraction
high energy electrons
x rays
electron diffraction
optical properties
energy
single crystals
defects
room temperature
spectroscopy
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy. / Webster, Preston T.; Shalindar, Arvind J.; Schaefer, Stephen T.; Johnson, Shane.

In: Applied Physics Letters, Vol. 111, No. 8, 082104, 21.08.2017.

Research output: Contribution to journalArticle

Webster, Preston T. ; Shalindar, Arvind J. ; Schaefer, Stephen T. ; Johnson, Shane. / Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy. In: Applied Physics Letters. 2017 ; Vol. 111, No. 8.
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