Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

Philippe C. Adell; Hugh Barnaby; Ron D. Schrimpf; Bert Vermeire

doi:10.1109/TNS.2007.911419

Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

Philippe C. Adell, Hugh Barnaby, Ron D. Schrimpf, Bert Vermeire

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.

Original language	English (US)
Pages (from-to)	2174-2180
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2007.911419
State	Published - Dec 2007

Keywords

Band-to-band tunneling
Fully depleted SOI
GIDL
High current regime
Total ionizing dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2007.911419

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abstract = "We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.",

keywords = "Band-to-band tunneling, Fully depleted SOI, GIDL, High current regime, Total ionizing dose",

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PY - 2007/12

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AB - We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.

KW - Band-to-band tunneling

KW - Fully depleted SOI

KW - GIDL

KW - High current regime

KW - Total ionizing dose

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Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

Abstract

Keywords

ASJC Scopus subject areas

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