Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

Philippe C. Adell, Hugh Barnaby, Ron D. Schrimpf, Bert Vermeire

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.

Original languageEnglish (US)
Pages (from-to)2174-2180
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume54
Issue number6
DOIs
StatePublished - Dec 2007

Fingerprint

Impact ionization
Drain current
SOI (semiconductors)
Leakage currents
leakage
Degradation
augmentation
high current
degradation
ionization
dosage
simulation

Keywords

  • Band-to-band tunneling
  • Fully depleted SOI
  • GIDL
  • High current regime
  • Total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Band-to-Band Tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices. / Adell, Philippe C.; Barnaby, Hugh; Schrimpf, Ron D.; Vermeire, Bert.

In: IEEE Transactions on Nuclear Science, Vol. 54, No. 6, 12.2007, p. 2174-2180.

Research output: Contribution to journalArticle

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