BAND STRUCTURE OF Si III and Ge III.

R. Alben, S. Goldstein, Michael Thorpe, D. Weaire

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

The calculations indicate, inter alia, that fivefold rings of bonds have important consequences for the band structure of a tetrahedrally bonded solid. Certain band edges are shifted if the structure contains many fivefold rings as does Ge III. Current models for amorphous Si and Ge involve such rings, and it is suggested that if amorphous tetrahedrally bonded Sn could be made, the existence of a sufficient proportion of fivefold rings in the structure might result in this being a semiconductor with a sizeable gap.

Original languageEnglish (US)
Pages (from-to)545-552
Number of pages8
JournalPhysica Status Solidi (B) Basic Research
Volume53
Issue number2
Publication statusPublished - Oct 1972
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Alben, R., Goldstein, S., Thorpe, M., & Weaire, D. (1972). BAND STRUCTURE OF Si III and Ge III. Physica Status Solidi (B) Basic Research, 53(2), 545-552.