The calculations indicate, inter alia, that fivefold rings of bonds have important consequences for the band structure of a tetrahedrally bonded solid. Certain band edges are shifted if the structure contains many fivefold rings as does Ge III. Current models for amorphous Si and Ge involve such rings, and it is suggested that if amorphous tetrahedrally bonded Sn could be made, the existence of a sufficient proportion of fivefold rings in the structure might result in this being a semiconductor with a sizeable gap.
|Original language||English (US)|
|Number of pages||8|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - Oct 1972|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics