Band structure calculation for quantum dot solar cells using k.p method

Som N. Dahal; Stephen P. Bremner; Christiana B. Honsberg

doi:10.1109/PVSC.2008.4922605

Band structure calculation for quantum dot solar cells using k.p method

Som N. Dahal, Stephen P. Bremner, Christiana B. Honsberg

Electrical, Computer, and Energy Engineering, School of (ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al_0.57In _0.43As/InP_0.87Sb_0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.

Original language	English (US)
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922605
State	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: May 11 2008 → May 16 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country	United States
City	San Diego, CA
Period	5/11/08 → 5/16/08

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2008.4922605

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Dahal, S. N., Bremner, S. P., & Honsberg, C. B. (2008). Band structure calculation for quantum dot solar cells using k.p method. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922605] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922605

Dahal, SN, Bremner, SP & Honsberg, CB 2008, Band structure calculation for quantum dot solar cells using k.p method. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922605, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922605

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abstract = "Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In 0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.",

author = "Dahal, {Som N.} and Bremner, {Stephen P.} and Honsberg, {Christiana B.}",

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N2 - Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In 0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.

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