Abstract
Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In 0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| DOIs | |
| State | Published - 2008 |
| Externally published | Yes |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: May 11 2008 → May 16 2008 |
Other
| Other | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 5/11/08 → 5/16/08 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Band structure calculation for quantum dot solar cells using k.p method. / Dahal, Som N.; Bremner, Stephen P.; Honsberg, Christiana.
Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922605.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Band structure calculation for quantum dot solar cells using k.p method
AU - Dahal, Som N.
AU - Bremner, Stephen P.
AU - Honsberg, Christiana
PY - 2008
Y1 - 2008
N2 - Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In 0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.
AB - Quantum dot hetero structures are possible candidate materials for high efficiency solar cells using advanced approaches such as intermediate bands. Lattice mismatch in the epitaxial growth of quantum dot (QD) causes strain in the structure. Here we report the use of the k.p method to calculate the band structure including the effects of strain, and light and heavy holes. With the modified band gaps due to strain, a material search is performed among III-V binaries and ternaries for a high efficiency QD solar cell material with negligible valence band offsets. It is found that the condition of negligible valence band offsets severely limits the choice of materials. The closest to ideal barrier/dot material system found is Al0.57In 0.43As/InP0.87Sb0.13 corresponding to an efficiency of 58% under x1000 solar concentration for AM 1.5 spectrum.
UR - http://www.scopus.com/inward/record.url?scp=84879703407&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879703407&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922605
DO - 10.1109/PVSC.2008.4922605
M3 - Conference contribution
AN - SCOPUS:84879703407
SN - 9781424416417
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
ER -