Band-structure and quantum effects on hole transport in p-MOSFETs

Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Using a Monte Carlo method, we investigate hole transport in ultrasmall p-channel Si MOSFETs with gate lengths of 25 nm. The device simulator couples a 2D Poisson solver with a discretized 6 × 6 k.p Hamiltonian solver that includes the effect of the confining potential and provides the subband structure in the channel region. In addition, carriers in the source and drain regions are treated as quasi 3D particles and the band-structure information is included by solving for the eigenenergies of a more compact 6 × 6 k.p Hamiltonian.

Original languageEnglish (US)
Pages (from-to)27-30
Number of pages4
JournalJournal of Computational Electronics
Volume4
Issue number1-2
DOIs
StatePublished - Apr 1 2005

Keywords

  • 2D Monte Carlo
  • Hole transport
  • Six band k.p
  • Valence band-structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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