Band structure and high-field electron transport of a ZnS phosphor in AC thin-film electroluminescent devices

Insook Lee, S. Pennathur, S. M. Goodnick, J. F. Wager

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A nonlocal empirical pseudopotential calculation has been performed for ZnS and used in the full-band Monte Carlo model which includes all the pertinent electron scattering mechanisms. Band to-band impact ionization and impact excitation of luminescence centers are included, both of which are threshold phenomena crucial to the operation of an AC thin-film electroluminescent device. The impact excitation yield (the number of excited centers per traversing electron in the phosphor) exhibits a monotonic increase with increasing phosphor field in agreement with experiment. However, at high fields where impact ionization begins to significantly affect the transport, the impact excitation yield is somewhat suppressed. We have also examined how the band structure affects the high-field electron transport in ZnS.

Original languageEnglish (US)
Pages (from-to)517-521
Number of pages5
JournalJournal of the Korean Physical Society
Volume31
Issue number3
StatePublished - Dec 1 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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