Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition

Joseph Shammas, Yu Yang, Xingye Wang, Franz A.M. Koeck, Martha McCartney, David Smith, Robert Nemanich

Research output: Contribution to journalArticle

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Abstract

Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 ± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 ± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.

Original languageEnglish (US)
Article number171604
JournalApplied Physics Letters
Volume111
Issue number17
DOIs
StatePublished - Oct 23 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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