4 Citations (Scopus)

Abstract

Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 ± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 ± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.

Original languageEnglish (US)
Article number171604
JournalApplied Physics Letters
Volume111
Issue number17
DOIs
StatePublished - Oct 23 2017

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boron nitrides
diamonds
vapor deposition
photoelectron spectroscopy
conduction bands
valence
transmission electron microscopy
x rays
diamond films
epitaxy
fluorine
nucleation
chemistry
nitrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition. / Shammas, Joseph; Yang, Yu; Wang, Xingye; Koeck, Franz A.M.; McCartney, Martha; Smith, David; Nemanich, Robert.

In: Applied Physics Letters, Vol. 111, No. 17, 171604, 23.10.2017.

Research output: Contribution to journalArticle

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abstract = "Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 ± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 ± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.",
author = "Joseph Shammas and Yu Yang and Xingye Wang and Koeck, {Franz A.M.} and Martha McCartney and David Smith and Robert Nemanich",
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T1 - Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition

AU - Shammas, Joseph

AU - Yang, Yu

AU - Wang, Xingye

AU - Koeck, Franz A.M.

AU - McCartney, Martha

AU - Smith, David

AU - Nemanich, Robert

PY - 2017/10/23

Y1 - 2017/10/23

N2 - Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 ± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 ± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.

AB - Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 ± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 ± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.

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