Band offset measurements of the Si3N4/GaN (0001) interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

76 Scopus citations

Abstract

The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.

Original languageEnglish (US)
Pages (from-to)3949-3954
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number6
DOIs
StatePublished - Sep 15 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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