The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.
ASJC Scopus subject areas
- Physics and Astronomy(all)