Band offset measurements of the Si3N4/GaN (0001) interface

T. E. Cook; C. C. Fulton; W. J. Mecouch; R. F. Davis; G. Lucovsky; R. J. Nemanich

doi:10.1063/1.1601314

Band offset measurements of the Si₃N₄/GaN (0001) interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich

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89 Scopus citations

Abstract

The band offset measurements of the Si₃N₄/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH₃ at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si₃N₄ valence band.

Original language	English (US)
Pages (from-to)	3949-3954
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1601314
State	Published - Sep 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1601314

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abstract = "The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.",

author = "Cook, {T. E.} and Fulton, {C. C.} and Mecouch, {W. J.} and Davis, {R. F.} and G. Lucovsky and Nemanich, {R. J.}",

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T1 - Band offset measurements of the Si3N4/GaN (0001) interface

AU - Cook, T. E.

AU - Fulton, C. C.

AU - Mecouch, W. J.

AU - Davis, R. F.

AU - Lucovsky, G.

AU - Nemanich, R. J.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.

AB - The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Band offset measurements of the Si₃N₄/GaN (0001) interface

Abstract

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