Band offset measurements of the GaN (0001)/HfO 2 interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, Robert Nemanich

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.

Original languageEnglish (US)
Pages (from-to)7155-7158
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number11
DOIs
StatePublished - Dec 1 2003
Externally publishedYes

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gallium nitrides
photoelectric emission
hafnium
densification
conduction bands
oxidation
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. (2003). Band offset measurements of the GaN (0001)/HfO 2 interface. Journal of Applied Physics, 94(11), 7155-7158. https://doi.org/10.1063/1.1625579

Band offset measurements of the GaN (0001)/HfO 2 interface. / Cook, T. E.; Fulton, C. C.; Mecouch, W. J.; Davis, R. F.; Lucovsky, G.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 94, No. 11, 01.12.2003, p. 7155-7158.

Research output: Contribution to journalArticle

Cook, TE, Fulton, CC, Mecouch, WJ, Davis, RF, Lucovsky, G & Nemanich, R 2003, 'Band offset measurements of the GaN (0001)/HfO 2 interface', Journal of Applied Physics, vol. 94, no. 11, pp. 7155-7158. https://doi.org/10.1063/1.1625579
Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich R. Band offset measurements of the GaN (0001)/HfO 2 interface. Journal of Applied Physics. 2003 Dec 1;94(11):7155-7158. https://doi.org/10.1063/1.1625579
Cook, T. E. ; Fulton, C. C. ; Mecouch, W. J. ; Davis, R. F. ; Lucovsky, G. ; Nemanich, Robert. / Band offset measurements of the GaN (0001)/HfO 2 interface. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 11. pp. 7155-7158.
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