Band offset measurements of the GaN (0001)/HfO 2 interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticle

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Abstract

The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.

Original languageEnglish (US)
Pages (from-to)7155-7158
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number11
DOIs
StatePublished - Dec 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO 2 interface. Journal of Applied Physics, 94(11), 7155-7158. https://doi.org/10.1063/1.1625579