Band offset measurements of the GaN (0001)/HfO 2 interface

T. E. Cook; C. C. Fulton; W. J. Mecouch; R. F. Davis; G. Lucovsky; R. J. Nemanich

doi:10.1063/1.1625579

Band offset measurements of the GaN (0001)/HfO ₂ interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich

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72 Scopus citations

Abstract

The photoemission spectroscopy was used to analyze the band offsets of HfO ₂ on clean gallium nitride (GaN) (0001) surfaces. The HfO ₂ was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO ₂ interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.

Original language	English (US)
Pages (from-to)	7155-7158
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.1625579
State	Published - Dec 1 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Band offset measurements of the GaN (0001)/HfO 2 interface",

abstract = "The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.",

author = "Cook, {T. E.} and Fulton, {C. C.} and Mecouch, {W. J.} and Davis, {R. F.} and G. Lucovsky and Nemanich, {R. J.}",

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TY - JOUR

T1 - Band offset measurements of the GaN (0001)/HfO 2 interface

AU - Cook, T. E.

AU - Fulton, C. C.

AU - Mecouch, W. J.

AU - Davis, R. F.

AU - Lucovsky, G.

AU - Nemanich, R. J.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.

AB - The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.

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Band offset measurements of the GaN (0001)/HfO ₂ interface

Abstract

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