The photoemission spectroscopy was used to analyze the band offsets of HfO 2 on clean gallium nitride (GaN) (0001) surfaces. The HfO 2 was synthesized by deposition of several monolayers of hafnium followed by remote plasma oxidation at 300 °C and a 650 °C densification anneal. The x-ray photoemission spectra (XPS) and ultraviolet photoemission spectra (UPS) were used for measuring the offset bands. The results show that the final annealed GaN/HfO 2 interface exhibited a valance band offset of 0.3 eV and a conduction band offset of 2.1 eV.
ASJC Scopus subject areas
- Physics and Astronomy(all)